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NCE60H10F-VB Product details
Back to previous pageProduct introduction：
1. NCE60H10F-VB Product Introduction
NCE60H10F-VB is a **single N-channel MOSFET**, using **TO220F package**, designed for high-performance power management and switching applications. Its **maximum drain-source voltage (VDS)** is 60V, **gate-source voltage (VGS)** is ±20V, and the turn-on threshold voltage is **3V**. The **on-resistance (RDS(ON))** of the device is **5mΩ** at **VGS = 10V** and **13mΩ** at **VGS = 4.5V**, showing extremely low conduction loss and excellent thermal management performance. NCE60H10F-VB has a **maximum drain current (ID)** of 120A, making it suitable for carrying large load currents and providing reliable power conversion and control. The design using **Trench technology** further enhances the efficiency and response speed of the device, making it suitable for various harsh working environments.
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NCE60H10F-VB is a **single N-channel MOSFET**, using **TO220F package**, designed for high-performance power management and switching applications. Its **maximum drain-source voltage (VDS)** is 60V, **gate-source voltage (VGS)** is ±20V, and the turn-on threshold voltage is **3V**. The **on-resistance (RDS(ON))** of the device is **5mΩ** at **VGS = 10V** and **13mΩ** at **VGS = 4.5V**, showing extremely low conduction loss and excellent thermal management performance. NCE60H10F-VB has a **maximum drain current (ID)** of 120A, making it suitable for carrying large load currents and providing reliable power conversion and control. The design using **Trench technology** further enhances the efficiency and response speed of the device, making it suitable for various harsh working environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 3V | 120A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
II. NCE60H10F-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|------------------------|---------------------------|----------------------------------|
| **Package type** | TO220F | Provides good heat dissipation and mechanical strength|
| **Configuration** | Single N-channel MOSFET | Single-channel high-efficiency power switch|
| **Drain-source voltage (VDS)** | 60V | Maximum voltage between drain and source|
| **Gate-source voltage (VGS)** | ±20V | Maximum voltage between gate and source|
| **Turning threshold voltage (Vth)** | 3V | Minimum voltage required to start conduction|
| **On-resistance (RDS(ON))** | 5mΩ (@VGS = 10V) | On-resistance at high gate voltage|
| | 13mΩ (@VGS = 4.5V) | On-resistance at low gate voltage|
| **Maximum drain current (ID)** | 120A | Maximum current the device can sustainably carry|
| **Technology** | Trench | Using trench technology to reduce switching losses|
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| **Parameter** | **Value** | **Description** |
|------------------------|---------------------------|----------------------------------|
| **Package type** | TO220F | Provides good heat dissipation and mechanical strength|
| **Configuration** | Single N-channel MOSFET | Single-channel high-efficiency power switch|
| **Drain-source voltage (VDS)** | 60V | Maximum voltage between drain and source|
| **Gate-source voltage (VGS)** | ±20V | Maximum voltage between gate and source|
| **Turning threshold voltage (Vth)** | 3V | Minimum voltage required to start conduction|
| **On-resistance (RDS(ON))** | 5mΩ (@VGS = 10V) | On-resistance at high gate voltage|
| | 13mΩ (@VGS = 4.5V) | On-resistance at low gate voltage|
| **Maximum drain current (ID)** | 120A | Maximum current the device can sustainably carry|
| **Technology** | Trench | Using trench technology to reduce switching losses|
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Domain and module applications：
III. Application Fields and Module Examples
1. **Power Management Systems:**
NCE60H10F-VB is an ideal choice for **high-efficiency DC-DC converters** and **power adapters**. Its low on-resistance and high current capability can significantly improve energy conversion efficiency and reduce overall heat loss.
2. **Electric Vehicles:**
In the **Battery Management System (BMS)** of electric vehicles, this MOSFET can be used for battery charging and discharging control to ensure stable operation of the battery pack under high current environment.
3. **Industrial Automation:**
This device is widely used in **motor drives** and **automatic control systems**. It can efficiently control the start-up and operation of high-power motors and improve the reliability and response speed of the system.
4. **Consumer Electronics:**
NCE60H10F-VB is suitable for **fast charging technology** smartphones and other consumer electronic devices, helping to achieve faster charging speeds and enhance user experience.
5. **Communication Devices:**
In **base station power supplies** and **network equipment**, this MOSFET can be used for efficient power switching to ensure stability and efficiency under high load conditions to meet the needs of modern communication networks.
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With its efficient trench technology and excellent electrical characteristics, NCE60H10F-VB has become a key component in a variety of applications. Its excellent heat dissipation performance and load-bearing capacity have made it widely used in modern power management, electric vehicles, and industrial control.
1. **Power Management Systems:**
NCE60H10F-VB is an ideal choice for **high-efficiency DC-DC converters** and **power adapters**. Its low on-resistance and high current capability can significantly improve energy conversion efficiency and reduce overall heat loss.
2. **Electric Vehicles:**
In the **Battery Management System (BMS)** of electric vehicles, this MOSFET can be used for battery charging and discharging control to ensure stable operation of the battery pack under high current environment.
3. **Industrial Automation:**
This device is widely used in **motor drives** and **automatic control systems**. It can efficiently control the start-up and operation of high-power motors and improve the reliability and response speed of the system.
4. **Consumer Electronics:**
NCE60H10F-VB is suitable for **fast charging technology** smartphones and other consumer electronic devices, helping to achieve faster charging speeds and enhance user experience.
5. **Communication Devices:**
In **base station power supplies** and **network equipment**, this MOSFET can be used for efficient power switching to ensure stability and efficiency under high load conditions to meet the needs of modern communication networks.
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With its efficient trench technology and excellent electrical characteristics, NCE60H10F-VB has become a key component in a variety of applications. Its excellent heat dissipation performance and load-bearing capacity have made it widely used in modern power management, electric vehicles, and industrial control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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