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NCE609-VB Product details

Product introduction:

NCE609-VB Product Introduction

NCE609-VB is a high-performance common-drain N+P channel MOSFET in a TO252-4L package, designed to provide excellent power efficiency. The device has a maximum drain-source voltage (VDS) of ±40V and supports a gate-source voltage (VGS) of ±20V, suitable for a variety of power management and drive applications. Its threshold voltage (Vth) is 1.8V and -1.7V, respectively, ensuring fast switching at lower voltages. At VGS of 4.5V, the on-resistance (RDS(ON)) of NCE609-VB is 14mΩ (the same for both N-channel and P-channel), and 16mΩ at VGS of 10V, providing up to ±50A of continuous drain current (ID). The device uses advanced Trench technology, has excellent thermal management capabilities and switching performance, and is suitable for a wide range of application scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252-4L Common Drain-N+P ±40V 1.8/-1.7V ±50A 16/16mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252-4L Common Drain-N+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252-4L Common Drain-N+P ±40V 1.8/-1.7V ±50A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252-4L Common Drain-N+P ±40V 1.8/-1.7V ±50A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252-4L Common Drain-N+P
Detailed parameter description

- **Model**: NCE609-VB
- **Package**: TO252-4L
- **Configuration**: Common drain N+P channel
- **Drain-source voltage (VDS)**: ±40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**:
- N channel: 1.8V
- P channel: -1.7V
- **On-resistance (RDS(ON))**:
- @ VGS = 4.5V: N channel 14mΩ, P channel 14mΩ
- @ VGS = 10V: N channel 16mΩ, P channel 16mΩ
- **Continuous leakage current (ID)**: ±50A
- **Maximum power dissipation (Ptot)**: Suitable for high power applications
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench

Domain and module applications:

Applicable fields and modules

NCE609-VB demonstrates its excellent performance in many fields, mainly applicable to the following fields:

1. **Power management system**: Due to its excellent conduction performance and low RDS(ON) characteristics, NCE609-VB is widely used in DC-DC converters and switching power supplies, which can effectively improve the efficiency of power conversion, especially in high power and high current applications.

2. **Motor drive and control**: The high current carrying capacity of this MOSFET makes it an ideal choice for motor drive circuits, and is widely used in motor control in power tools, household appliances and industrial automation equipment.

3. **LED lighting drive**: NCE609-VB is suitable for LED drive circuits. Through stable current output, it ensures uniform brightness of LEDs and improves the performance and life of lighting systems.

4. **Battery management system**: In electric vehicles and renewable energy systems, NCE609-VB can be used for battery charge and discharge management, optimize energy utilization efficiency, and improve the reliability and safety of the overall system.

5. **Power Switching Application**: The device is suitable for various power switching applications due to its fast switching characteristics, especially in communication equipment and high-frequency circuits, providing high efficiency and reliability.

With its excellent electrical characteristics, NCE609-VB is an ideal choice for various power management and drive applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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