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NCE55H12-VB Product details

Product introduction:

The following is detailed product information of the **NCE55H12-VB** MOSFET, including product introduction, parameter description, and examples of application areas and modules.

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### 1. Product Introduction
**NCE55H12-VB** is a high-performance **single N-channel MOSFET** designed with **TO220** package, optimized for high voltage and high current applications. Its **drain-source voltage (VDS)** can reach **60V** and the maximum drain current is **210A**, which is very suitable for use in power management systems that require high reliability and high efficiency. The **threshold voltage (Vth)** of the device is **3V**, which can be reliably turned on at a lower gate-source voltage, ensuring flexible application scenarios. Its on-resistance (RDS(ON)) is **3mΩ** at **VGS = 10V**, which greatly reduces power loss and improves overall energy efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 60V 3V 210A 3mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 60V 3V 210A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 60V 3V 210A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
## 2. Detailed parameter description
- **Model**: NCE55H12-VB
- **Package**: TO220
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 3V
- **RDS(ON) (on-resistance)**:
- 9mΩ @ VGS = 4.5V
- 3mΩ @ VGS = 10V
- **ID (maximum drain current)**: 210A
- **Technology**: Trench

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Domain and module applications:

III. Application fields and module examples
1. **Power management system**
NCE55H12-VB is widely used in switching power supplies and DC-DC converters. Its low on-resistance can significantly reduce energy loss and optimize power efficiency, making it suitable for high-performance power supply design.

2. **Motor drive**
This MOSFET can provide strong current support in motor control modules and is suitable for motor drive applications in industrial and consumer electronics, such as power tools and home appliances.

3. **Automotive electronics**
In automotive electronic systems, NCE55H12-VB can be used for motor control and load switching to ensure the stability and reliability of automotive electronic equipment under high load and high temperature environments.

4. **Portable devices**
This device can effectively improve the energy efficiency of portable electronic devices, such as mobile power supplies and handheld devices, helping to extend battery life and improve device performance.

5. **Industrial Automation**
NCE55H12-VB can meet the fast switching and high current requirements in industrial automation applications, such as servo motor control and automation equipment drive, ensuring efficient and stable operation.

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**Summary**: **NCE55H12-VB**, with its **60V** drain-source voltage and **210A** maximum drain current, combined with extremely low on-resistance and **Trench technology**, has demonstrated excellent performance in multiple fields such as power management, motor drive and automotive electronics, and is an ideal choice for modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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