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NCE5558K-VB Product details
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1. NCE5558K-VB Product Introduction
NCE5558K-VB is a high-efficiency **N-channel MOSFET**, using **TO252 package**, designed for various power conversion and switching applications. The device has a **maximum drain-source voltage (VDS)** of **60V**, supports **±20V gate-source voltage (VGS)**, and its turn-on threshold voltage is **2.5V**, ensuring reliable conduction at lower voltages. The on-resistance of NCE5558K-VB is **10mΩ** at **VGS = 10V** and **13mΩ** at **VGS = 4.5V**, with extremely low conduction loss, suitable for high-efficiency power management solutions. The maximum drain current is **58A**, enabling it to handle larger loads and is widely used in industrial control, automotive electronics, consumer electronics and other fields.
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NCE5558K-VB is a high-efficiency **N-channel MOSFET**, using **TO252 package**, designed for various power conversion and switching applications. The device has a **maximum drain-source voltage (VDS)** of **60V**, supports **±20V gate-source voltage (VGS)**, and its turn-on threshold voltage is **2.5V**, ensuring reliable conduction at lower voltages. The on-resistance of NCE5558K-VB is **10mΩ** at **VGS = 10V** and **13mΩ** at **VGS = 4.5V**, with extremely low conduction loss, suitable for high-efficiency power management solutions. The maximum drain current is **58A**, enabling it to handle larger loads and is widely used in industrial control, automotive electronics, consumer electronics and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. NCE5558K-VB Detailed Parameters
| **Parameter** | **Value** | **Description** |
|------------------------|----------------------------|----------------------------------|
| **Package Type** | TO252 | Compact package suitable for surface mounting|
| **Configuration** | Single N-channel MOSFET | Provides single-channel high-efficiency power control|
| **Drain-Source Voltage (VDS)** | 60V | Maximum Drain-Source Voltage Difference|
| **Gate-Source Voltage (VGS)** | ±20V | Maximum Gate-Source Voltage|
| **Turning Threshold Voltage (Vth)** | 2.5V | Minimum voltage required for MOSFET to start conducting|
| **On-Resistance (RDS(ON))** | 10mΩ (@VGS = 10V) | Low on-resistance at high voltage|
| | 13mΩ (@VGS = 4.5V) | On-resistance at lower voltages|
| **Maximum drain current (ID)** | 58A | Maximum continuous current|
| **Technology** | Trench | Optimized design to reduce switching losses|
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| **Parameter** | **Value** | **Description** |
|------------------------|----------------------------|----------------------------------|
| **Package Type** | TO252 | Compact package suitable for surface mounting|
| **Configuration** | Single N-channel MOSFET | Provides single-channel high-efficiency power control|
| **Drain-Source Voltage (VDS)** | 60V | Maximum Drain-Source Voltage Difference|
| **Gate-Source Voltage (VGS)** | ±20V | Maximum Gate-Source Voltage|
| **Turning Threshold Voltage (Vth)** | 2.5V | Minimum voltage required for MOSFET to start conducting|
| **On-Resistance (RDS(ON))** | 10mΩ (@VGS = 10V) | Low on-resistance at high voltage|
| | 13mΩ (@VGS = 4.5V) | On-resistance at lower voltages|
| **Maximum drain current (ID)** | 58A | Maximum continuous current|
| **Technology** | Trench | Optimized design to reduce switching losses|
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Domain and module applications：
III. Application Fields and Modules
1. **Power Management:**
NCE5558K-VB is commonly used in **DC-DC converters** and **power switches**. Due to its low on-resistance, it can effectively reduce power consumption and improve the energy efficiency and stability of the system.
2. **Automotive Electronics:**
This device is widely used in **automotive power systems** and **control modules**. It can handle high current loads and provide efficient power management solutions for automotive electronic devices.
3. **Consumer Electronics:**
NCE5558K-VB plays an important role in **smartphones**, **tablets** and other portable devices, providing efficient power conversion and extending the battery life of the device.
4. **Industrial Control:**
Suitable for **industrial automation systems** and **motor drives**, NCE5558K-VB provides high reliability and stability to ensure efficient operation of industrial equipment.
5. **LED Lighting:**
In **LED drive circuits**, the device can be used as a switching element to provide efficient power conversion and stable output current to ensure good performance of the lighting system.
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NCE5558K-VB is a high-performance N-channel MOSFET suitable for a variety of modern power management and switching applications to meet the needs of high efficiency and low power consumption.
1. **Power Management:**
NCE5558K-VB is commonly used in **DC-DC converters** and **power switches**. Due to its low on-resistance, it can effectively reduce power consumption and improve the energy efficiency and stability of the system.
2. **Automotive Electronics:**
This device is widely used in **automotive power systems** and **control modules**. It can handle high current loads and provide efficient power management solutions for automotive electronic devices.
3. **Consumer Electronics:**
NCE5558K-VB plays an important role in **smartphones**, **tablets** and other portable devices, providing efficient power conversion and extending the battery life of the device.
4. **Industrial Control:**
Suitable for **industrial automation systems** and **motor drives**, NCE5558K-VB provides high reliability and stability to ensure efficient operation of industrial equipment.
5. **LED Lighting:**
In **LED drive circuits**, the device can be used as a switching element to provide efficient power conversion and stable output current to ensure good performance of the lighting system.
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NCE5558K-VB is a high-performance N-channel MOSFET suitable for a variety of modern power management and switching applications to meet the needs of high efficiency and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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