NCE5080K-VB Product details
Product introduction:
NCE5080K-VB is a high-performance single N-channel power MOSFET in TO252 package, designed for high voltage and high current applications. The device has a maximum drain-source voltage (VDS) of 60V and supports a gate-source voltage (VGS) of ±20V, ensuring a wide range of application flexibility. Its threshold voltage (Vth) is 3V, which helps to turn on quickly at lower voltages. The on-resistance (RDS(ON)) of NCE5080K-VB is 12mΩ at VGS of 4.5V, and is further reduced to 4.5mΩ at VGS of 10V, with a continuous leakage current (ID) of up to 97A. With its advanced Trench technology, this MOSFET provides excellent switching performance and thermal management capabilities, and is suitable for various power management and drive circuits.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | 4.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Model**: NCE5080K-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 4.5mΩ @ VGS = 10V
- **Continuous leakage current (ID)**: 97A
- **Maximum power dissipation (Ptot)**: Suitable for high power applications
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench
Domain and module applications:
NCE5080K-VB has demonstrated its excellent performance in a variety of application fields, mainly applicable to the following fields:
1. **Power management system**: NCE5080K-VB is a key component in DC-DC converters and switching power supplies, which can effectively improve the efficiency of power conversion and is widely used in consumer electronics, computer power supplies and industrial power systems.
2. **Electric Vehicles (EV)**: This MOSFET is suitable for switching elements in battery management systems, which can efficiently control the charging and discharging process of the battery to ensure the performance and endurance of electric vehicles.
3. **LED drive circuit**: Due to its low on-resistance and high current carrying capacity, NCE5080K-VB is widely used in LED drive modules to provide stable current output, ensure uniform brightness of LEDs and extend service life.
4. **Motor drive and control**: This MOSFET is very suitable for motor control circuits, which can achieve efficient speed regulation and operation, and is widely used in automation equipment, robots and power tools.
5. **High-frequency switching applications**: The fast switching characteristics of NCE5080K-VB enable it to perform well in high-frequency switching circuits, ensuring the efficiency and stability of the system, and is suitable for switching power supplies in communications and industrial equipment.
With its excellent performance, NCE5080K-VB is an ideal choice for a variety of power management and drive applications.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image