中文
English
NCE5055K-VB Product details
Back to previous pageProduct introduction：
Product Introduction
NCE5055K-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and medium current applications. Its rated VDS is 60V, and VGS can reach ±20V, providing excellent conduction performance. The device has an on-resistance RDS(ON) of 13mΩ@VGS=4.5V and 10mΩ@VGS=10V, a maximum drain current ID of 58A, and uses Trench technology to ensure high efficiency and low heat dissipation, making it very suitable for various power management and conversion applications.
NCE5055K-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and medium current applications. Its rated VDS is 60V, and VGS can reach ±20V, providing excellent conduction performance. The device has an on-resistance RDS(ON) of 13mΩ@VGS=4.5V and 10mΩ@VGS=10V, a maximum drain current ID of 58A, and uses Trench technology to ensure high efficiency and low heat dissipation, making it very suitable for various power management and conversion applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ@VGS=4.5V
- 10mΩ@VGS=10V
- **Maximum leakage current (ID)**: 58A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ@VGS=4.5V
- 10mΩ@VGS=10V
- **Maximum leakage current (ID)**: 58A
- **Technology**: Trench
Domain and module applications：
Applications and modules: NCE5055K-VB is widely used in power management modules, DC-DC converters and motor drive circuits. In consumer electronics, industrial automation and electric vehicles, this MOSFET can effectively improve the efficiency and stability of the power system with its high voltage tolerance and low on-resistance. In addition, in solar inverters and high-efficiency power supplies, NCE5055K-VB can also provide reliable performance to meet various energy conversion needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
