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NCE4585K-VB Product details
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Product Introduction
NCE4585K-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and high current applications, with a rated VDS of 40V. Using advanced Trench technology, this MOSFET has extremely low on-resistance and is suitable for high-load and high-frequency power management systems, making it an ideal choice for modern electronic design.
NCE4585K-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and high current applications, with a rated VDS of 40V. Using advanced Trench technology, this MOSFET has extremely low on-resistance and is suitable for high-load and high-frequency power management systems, making it an ideal choice for modern electronic design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: NCE4585K-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 85A
- **Technology**: Trench
- **Model**: NCE4585K-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 85A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
NCE4585K-VB is widely used in many fields, including:
1. **Power management**: Its low on-resistance enables it to effectively reduce power consumption and improve energy efficiency in DC-DC converters and switching power supplies.
2. **Motor drive**: Suitable for motor control circuits, supporting high current operation to ensure the stability and performance of the motor.
3. **Consumer electronics**: In high-performance electronic devices, such as power management modules of smartphones and laptops, it provides efficient energy conversion.
4. **LED drive**: It can achieve efficient current control in LED lighting systems and extend the service life of LED components.
5. **Battery management system**: Suitable for battery charge and discharge management to improve the safety and stability of the system.
With its excellent performance, this MOSFET meets various stringent application requirements and has become a key component in many electronic designs.
NCE4585K-VB is widely used in many fields, including:
1. **Power management**: Its low on-resistance enables it to effectively reduce power consumption and improve energy efficiency in DC-DC converters and switching power supplies.
2. **Motor drive**: Suitable for motor control circuits, supporting high current operation to ensure the stability and performance of the motor.
3. **Consumer electronics**: In high-performance electronic devices, such as power management modules of smartphones and laptops, it provides efficient energy conversion.
4. **LED drive**: It can achieve efficient current control in LED lighting systems and extend the service life of LED components.
5. **Battery management system**: Suitable for battery charge and discharge management to improve the safety and stability of the system.
With its excellent performance, this MOSFET meets various stringent application requirements and has become a key component in many electronic designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
