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NCE4570K-VB Product details
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Product Introduction
NCE4570K-VB is a high-performance single N-channel MOSFET in TO252 package, suitable for high voltage and high current applications. With VDS of 60V and VGS of ±20V, the device provides excellent conduction performance, RDS(ON) of 12mΩ@VGS=4.5V and 4.5mΩ@VGS=10V, and can handle leakage current up to 97A. It adopts Trench technology, which is designed to provide high efficiency and reliability, and is very suitable for various power conversion and control circuits.
NCE4570K-VB is a high-performance single N-channel MOSFET in TO252 package, suitable for high voltage and high current applications. With VDS of 60V and VGS of ±20V, the device provides excellent conduction performance, RDS(ON) of 12mΩ@VGS=4.5V and 4.5mΩ@VGS=10V, and can handle leakage current up to 97A. It adopts Trench technology, which is designed to provide high efficiency and reliability, and is very suitable for various power conversion and control circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | 4.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 12mΩ@VGS=4.5V; 4.5mΩ@VGS=10V
- **Maximum leakage current (ID)**: 97A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 12mΩ@VGS=4.5V; 4.5mΩ@VGS=10V
- **Maximum leakage current (ID)**: 97A
- **Technology**: Trench
Domain and module applications：
Applications and modules: NCE4570K-VB is widely used in power management systems, DC-DC converters and motor drive circuits. Due to its high current and low on-resistance characteristics, it is particularly suitable for use in battery-powered devices, consumer electronics and industrial power modules. In automotive electronics and renewable energy systems, this MOSFET can also provide efficient power conversion and thermal management solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
