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NCE40H21CD-VB Product details
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The following is detailed product information of the **NCE40H21CD-VB** MOSFET, including product introduction, parameter description, and examples of application areas and modules.
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### 1. Product Introduction
**NCE40H21CD-VB** is a high-efficiency **single N-channel MOSFET** in a **TO263** package, designed for high current and high voltage applications. Its **drain-source voltage (VDS)** is **40V**, and the maximum drain current can reach **150A**, ensuring stability and reliability under harsh conditions. The **threshold voltage (Vth)** of the device is **3V**, enabling it to operate efficiently in a variety of power and switching applications. With an ultra-low on-resistance (RDS(ON)) of **2mΩ** at **VGS = 10V**, power losses are significantly reduced, making it ideal for power management solutions that require high performance.
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### 1. Product Introduction
**NCE40H21CD-VB** is a high-efficiency **single N-channel MOSFET** in a **TO263** package, designed for high current and high voltage applications. Its **drain-source voltage (VDS)** is **40V**, and the maximum drain current can reach **150A**, ensuring stability and reliability under harsh conditions. The **threshold voltage (Vth)** of the device is **3V**, enabling it to operate efficiently in a variety of power and switching applications. With an ultra-low on-resistance (RDS(ON)) of **2mΩ** at **VGS = 10V**, power losses are significantly reduced, making it ideal for power management solutions that require high performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. Detailed parameter description
- **Model**: NCE40H21CD-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 40V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 3V
- **RDS(ON) (on-resistance)**:
- 2.5mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **ID (maximum drain current)**: 150A
- **Technology**: Trench
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- **Model**: NCE40H21CD-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 40V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 3V
- **RDS(ON) (on-resistance)**:
- 2.5mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **ID (maximum drain current)**: 150A
- **Technology**: Trench
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Domain and module applications：
III. Application fields and module examples
1. **High-efficiency power management**
NCE40H21CD-VB is suitable for high-efficiency power management solutions such as switching power supplies and DC-DC converters. Its low on-resistance can significantly improve energy conversion efficiency and reduce heat loss.
2. **Electric vehicles**
In the power system of electric vehicles, this MOSFET can be used for motor drive and battery management, providing fast and reliable current control, supporting high-power applications, and improving the overall performance of the vehicle.
3. **Industrial automation**
NCE40H21CD-VB is widely used in industrial automation equipment for high-power motor control and power switching to ensure stable operation of equipment under high loads.
4. **Renewable energy systems**
The device plays an important role in solar inverters and wind power generation systems, helping to improve energy conversion efficiency and system reliability, and supporting sustainable energy solutions.
5. **LED driver**
NCE40H21CD-VB is suitable for LED lighting driver circuits. It can efficiently control the current of LEDs, ensure stable brightness output, and extend the service life of LEDs.
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**Summary**: The **40V** drain-source voltage and **150A** maximum drain current of NCE40H21CD-VB make it an excellent performer in power management, electric vehicles, and industrial automation. Its ultra-low on-resistance and advanced **Trench technology** combine to provide excellent performance and reliability to meet the high requirements of modern electronic products.
1. **High-efficiency power management**
NCE40H21CD-VB is suitable for high-efficiency power management solutions such as switching power supplies and DC-DC converters. Its low on-resistance can significantly improve energy conversion efficiency and reduce heat loss.
2. **Electric vehicles**
In the power system of electric vehicles, this MOSFET can be used for motor drive and battery management, providing fast and reliable current control, supporting high-power applications, and improving the overall performance of the vehicle.
3. **Industrial automation**
NCE40H21CD-VB is widely used in industrial automation equipment for high-power motor control and power switching to ensure stable operation of equipment under high loads.
4. **Renewable energy systems**
The device plays an important role in solar inverters and wind power generation systems, helping to improve energy conversion efficiency and system reliability, and supporting sustainable energy solutions.
5. **LED driver**
NCE40H21CD-VB is suitable for LED lighting driver circuits. It can efficiently control the current of LEDs, ensure stable brightness output, and extend the service life of LEDs.
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**Summary**: The **40V** drain-source voltage and **150A** maximum drain current of NCE40H21CD-VB make it an excellent performer in power management, electric vehicles, and industrial automation. Its ultra-low on-resistance and advanced **Trench technology** combine to provide excellent performance and reliability to meet the high requirements of modern electronic products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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