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NCE4028EK-VB Product details
Back to previous pageProduct introduction：
1. NCE4028EK-VB Product Introduction
NCE4028EK-VB is a high-performance **single N-channel MOSFET**, using **TO252 package**, designed for high current and low conduction loss applications. Its **maximum drain-source voltage (VDS)** is **40V**, and it supports **±20V gate-source voltage (VGS)**, providing users with good flexibility and reliability. The turn-on threshold voltage is **2.5V**, and the on-resistance is only **14mΩ** at **VGS = 4.5V**, and it is further reduced to **12mΩ** at **VGS = 10V**, which significantly reduces conduction loss and improves energy efficiency. In addition, the maximum drain current of NCE4028EK-VB is **55A**, and the **Trench technology** makes it perform well in high-frequency switching and high-power applications, which is very suitable for the needs of modern electronic devices.
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NCE4028EK-VB is a high-performance **single N-channel MOSFET**, using **TO252 package**, designed for high current and low conduction loss applications. Its **maximum drain-source voltage (VDS)** is **40V**, and it supports **±20V gate-source voltage (VGS)**, providing users with good flexibility and reliability. The turn-on threshold voltage is **2.5V**, and the on-resistance is only **14mΩ** at **VGS = 4.5V**, and it is further reduced to **12mΩ** at **VGS = 10V**, which significantly reduces conduction loss and improves energy efficiency. In addition, the maximum drain current of NCE4028EK-VB is **55A**, and the **Trench technology** makes it perform well in high-frequency switching and high-power applications, which is very suitable for the needs of modern electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. NCE4028EK-VB Detailed Parameters
| **Parameter** | **Value** | **Description** |
|------------------------|----------------------------|----------------------------------|
| **Package Type** | TO252 | Compact package with high power density|
| **Configuration** | Single N-channel MOSFET | Provides single-channel high-efficiency power control|
| **Drain-Source Voltage (VDS)** | 40V | Maximum Drain-Source Voltage Difference|
| **Gate-Source Voltage (VGS)** | ±20V | Maximum Gate-Source Voltage|
| **Turning Threshold Voltage (Vth)** | 2.5V | Minimum voltage required for MOSFET to start conducting|
| **On-Resistance (RDS(ON))** | 14mΩ (@VGS = 4.5V) | Reduce conduction loss and improve efficiency|
| | 12mΩ (@VGS = 10V） | |
| **Maximum Drain Current (ID)** | 55A | Maximum Continuous Current|
| **Technology** | Trench | Optimized Design to Reduce Switching Losses|
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| **Parameter** | **Value** | **Description** |
|------------------------|----------------------------|----------------------------------|
| **Package Type** | TO252 | Compact package with high power density|
| **Configuration** | Single N-channel MOSFET | Provides single-channel high-efficiency power control|
| **Drain-Source Voltage (VDS)** | 40V | Maximum Drain-Source Voltage Difference|
| **Gate-Source Voltage (VGS)** | ±20V | Maximum Gate-Source Voltage|
| **Turning Threshold Voltage (Vth)** | 2.5V | Minimum voltage required for MOSFET to start conducting|
| **On-Resistance (RDS(ON))** | 14mΩ (@VGS = 4.5V) | Reduce conduction loss and improve efficiency|
| | 12mΩ (@VGS = 10V） | |
| **Maximum Drain Current (ID)** | 55A | Maximum Continuous Current|
| **Technology** | Trench | Optimized Design to Reduce Switching Losses|
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Domain and module applications：
III. Application Fields and Modules
1. **Power Management:**
NCE4028EK-VB is particularly suitable for **switching power supplies (SMPS)** and **DC-DC converters**. Its low on-resistance can effectively improve the conversion efficiency of the power supply, reduce energy loss, and improve overall performance.
2. **Electric Vehicles:**
This MOSFET can be used in **electric vehicle motor control systems**, providing stable performance under high load and high frequency environments, helping to improve the energy efficiency and reliability of electric vehicles.
3. **Industrial Automation:**
NCE4028EK-VB is an ideal choice for power switches in **industrial equipment**, capable of controlling motors and other high-power loads to ensure efficient operation and long life of the equipment.
4. **Consumer Electronics:**
In **computer power supplies, audio systems** and other consumer electronics, NCE4028EK-VB can effectively provide stable power to ensure high performance and stability of the equipment.
5. **Data Centers:**
This MOSFET is suitable for **data center power management**, providing efficient power supply under rapidly changing load conditions and optimizing energy use in data centers.
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NCE4028EK-VB is a high-performance N-channel MOSFET that is widely used in a variety of modern electronic applications.
1. **Power Management:**
NCE4028EK-VB is particularly suitable for **switching power supplies (SMPS)** and **DC-DC converters**. Its low on-resistance can effectively improve the conversion efficiency of the power supply, reduce energy loss, and improve overall performance.
2. **Electric Vehicles:**
This MOSFET can be used in **electric vehicle motor control systems**, providing stable performance under high load and high frequency environments, helping to improve the energy efficiency and reliability of electric vehicles.
3. **Industrial Automation:**
NCE4028EK-VB is an ideal choice for power switches in **industrial equipment**, capable of controlling motors and other high-power loads to ensure efficient operation and long life of the equipment.
4. **Consumer Electronics:**
In **computer power supplies, audio systems** and other consumer electronics, NCE4028EK-VB can effectively provide stable power to ensure high performance and stability of the equipment.
5. **Data Centers:**
This MOSFET is suitable for **data center power management**, providing efficient power supply under rapidly changing load conditions and optimizing energy use in data centers.
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NCE4028EK-VB is a high-performance N-channel MOSFET that is widely used in a variety of modern electronic applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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