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NCE33H29D-VB Product details
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NCE33H29D-VB Product Introduction
NCE33H29D-VB is a high-performance unipolar N-type MOSFET in a **TO263** package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is **30V** and its maximum drain current (ID) can reach **260A**, which is suitable for power management systems with high power density and low power consumption. Its maximum gate-source voltage (VGS) is **±20V** and its threshold voltage (Vth) is **1.7V**, making it excellent in switching applications. At VGS of 4.5V, the on-resistance (RDS(ON)) is **1.6mΩ**, and it is even lower at VGS of 10V, reaching **1.4mΩ**. The NCE33H29D-VB with Trench technology provides extremely low on-resistance and excellent thermal management characteristics, making it an ideal choice for a variety of modern power applications.
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NCE33H29D-VB is a high-performance unipolar N-type MOSFET in a **TO263** package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is **30V** and its maximum drain current (ID) can reach **260A**, which is suitable for power management systems with high power density and low power consumption. Its maximum gate-source voltage (VGS) is **±20V** and its threshold voltage (Vth) is **1.7V**, making it excellent in switching applications. At VGS of 4.5V, the on-resistance (RDS(ON)) is **1.6mΩ**, and it is even lower at VGS of 10V, reaching **1.4mΩ**. The NCE33H29D-VB with Trench technology provides extremely low on-resistance and excellent thermal management characteristics, making it an ideal choice for a variety of modern power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | 1.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
| **Parameter** | **Value** |
|--------------------------|-------------------------|
| **Model** | NCE33H29D-VB |
| **Package** | TO263 |
| **Configuration** | Unipolar N-type|
| **Maximum drain-source voltage (VDS)** | 30V |
| **Maximum gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 1.6mΩ @ VGS = 4.5V |
| **On-resistance (RDS(ON))** | 1.4mΩ @ VGS = 10V |
| **Maximum drain current (ID)** | 260A |
| **Technology** | Trench |
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| **Parameter** | **Value** |
|--------------------------|-------------------------|
| **Model** | NCE33H29D-VB |
| **Package** | TO263 |
| **Configuration** | Unipolar N-type|
| **Maximum drain-source voltage (VDS)** | 30V |
| **Maximum gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 1.6mΩ @ VGS = 4.5V |
| **On-resistance (RDS(ON))** | 1.4mΩ @ VGS = 10V |
| **Maximum drain current (ID)** | 260A |
| **Technology** | Trench |
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Domain and module applications：
Applicable fields and modules
1. **High-efficiency power conversion**
NCE33H29D-VB is widely used in high-frequency switching power supplies and DC-DC converters. Its low on-resistance can effectively reduce power loss and improve power conversion efficiency, making it particularly suitable for modern power management solutions.
2. **Electric vehicle drive system**
This MOSFET is very suitable for the motor drive circuit of electric vehicles. It can handle currents up to 260A, ensuring the stability and high efficiency of electric vehicles under high load conditions.
3. **Industrial control and automation**
In industrial control systems, NCE33H29D-VB can be used as a power switch and driver element to provide reliable current control and efficient power management, supporting the stable operation of various automation equipment.
4. **High-power LED lighting**
This device is suitable for the driver circuit in high-power LED lighting systems. With its low resistance characteristics, it ensures the high efficiency and stability of lamps and improves the performance of the overall lighting system.
5. **Data Center Power Distribution**
NCE33H29D-VB can be used in power distribution and management modules in data centers to ensure reliable power supply for high-power servers and storage devices, and optimize overall energy efficiency and thermal management.
In summary, NCE33H29D-VB has demonstrated wide applicability in modern high-current, low-voltage applications and is an ideal solution for improving power performance and efficiency.
1. **High-efficiency power conversion**
NCE33H29D-VB is widely used in high-frequency switching power supplies and DC-DC converters. Its low on-resistance can effectively reduce power loss and improve power conversion efficiency, making it particularly suitable for modern power management solutions.
2. **Electric vehicle drive system**
This MOSFET is very suitable for the motor drive circuit of electric vehicles. It can handle currents up to 260A, ensuring the stability and high efficiency of electric vehicles under high load conditions.
3. **Industrial control and automation**
In industrial control systems, NCE33H29D-VB can be used as a power switch and driver element to provide reliable current control and efficient power management, supporting the stable operation of various automation equipment.
4. **High-power LED lighting**
This device is suitable for the driver circuit in high-power LED lighting systems. With its low resistance characteristics, it ensures the high efficiency and stability of lamps and improves the performance of the overall lighting system.
5. **Data Center Power Distribution**
NCE33H29D-VB can be used in power distribution and management modules in data centers to ensure reliable power supply for high-power servers and storage devices, and optimize overall energy efficiency and thermal management.
In summary, NCE33H29D-VB has demonstrated wide applicability in modern high-current, low-voltage applications and is an ideal solution for improving power performance and efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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