NCE3139-VB Product details
Product introduction:
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### 1. Product Introduction
**NCE3139-VB** is a high-performance **single P-channel MOSFET**, packaged in **SOT723-3**, suitable for use in space-constrained applications. The device has a **-20V** drain-source voltage (VDS) and **-0.78A** maximum drain current, and can operate stably at lower gate-source voltages, with a **threshold voltage (Vth)** of **-0.45V**. At **VGS = 10V**, its on-resistance (RDS(ON)) is **380mΩ**, and at **VGS = 4.5V**, it is **456mΩ**. NCE3139-VB uses **Trench technology** and is widely used in small electronic devices and power management systems, providing reliable switching performance and efficient current control.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P | -20V | -0.45V | -0.78A | 380mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P | -20V | -0.45V | -0.78A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P | -20V | -0.45V | -0.78A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-P |
### 2. Detailed parameter description
- **Model**: NCE3139-VB
- **Package**: SOT723-3
- **Configuration**: Single P-channel
- **VDS (drain-source voltage)**: -20V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: -0.45V
- **RDS(ON) (on-resistance)**:
- 456mΩ @ VGS = 4.5V
- 380mΩ @ VGS = 10V
- **ID (maximum drain current)**: -0.78A
- **Technology**: Trench
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Domain and module applications:
1. **Portable devices**
NCE3139-VB is suitable for portable electronic devices such as smartphones, tablets, etc. In these devices, this MOSFET can achieve efficient power management, help extend battery life and improve overall performance.
2. **Battery management system**
This MOSFET is widely used in battery management systems to control the charging and discharging process to ensure battery safety and efficiency, especially in power tools and renewable energy storage devices.
3. **Switching power supply (SMPS)**
NCE3139-VB is an ideal choice in switching power supply design. Its small package and high conduction capability make it suitable for low voltage and high current applications, which can effectively improve conversion efficiency.
4. **LED drive circuit**
This device is suitable for use in LED drive circuits, providing stable current control to ensure the brightness and life of LED lighting systems. It is widely used in home and commercial lighting.
5. **Consumer Electronics**
NCE3139-VB is also commonly used in other consumer electronics products, such as audio equipment, game consoles, etc. In these applications, it can be used for power switching and control to enhance user experience.
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**Summary**: NCE3139-VB has become a key component in a variety of small electronic devices and power management systems with its **-20V** drain-source voltage, **-0.78A** leakage current capability and **380mΩ** low on-resistance. The SOT723-3 package provides it with good space utilization and thermal management, enabling it to operate stably under high temperature and high load conditions, meeting the needs of modern electronic products.
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