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NCE30H25D-VB Product details
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The following is detailed product information of the **NCE30H25D-VB** MOSFET, including product introduction, parameter description, and examples of application areas and modules.
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### 1. Product Introduction
**NCE30H25D-VB** is a high-performance **single N-channel MOSFET**, using **TO263** package, with **30V** drain-source voltage (VDS) and up to **260A** leakage current capability. Its **threshold voltage (Vth)** is **1.7V**, which enables it to turn on quickly at a lower gate-source voltage. The device uses **Trench technology**, and the on-resistance (RDS(ON)) is as low as **1.4mΩ** at **VGS = 10V** and **1.6mΩ** at **VGS = 4.5V**. NCE30H25D-VB is particularly suitable for high-power power management, motor control and high-efficiency switching power supply, etc., which can significantly improve system efficiency and reduce energy consumption.
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### 1. Product Introduction
**NCE30H25D-VB** is a high-performance **single N-channel MOSFET**, using **TO263** package, with **30V** drain-source voltage (VDS) and up to **260A** leakage current capability. Its **threshold voltage (Vth)** is **1.7V**, which enables it to turn on quickly at a lower gate-source voltage. The device uses **Trench technology**, and the on-resistance (RDS(ON)) is as low as **1.4mΩ** at **VGS = 10V** and **1.6mΩ** at **VGS = 4.5V**. NCE30H25D-VB is particularly suitable for high-power power management, motor control and high-efficiency switching power supply, etc., which can significantly improve system efficiency and reduce energy consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | 1.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
### 2. Detailed parameter description
- **Model**: NCE30H25D-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON) (on-resistance)**:
- 1.6mΩ @ VGS = 4.5V
- 1.4mΩ @ VGS = 10V
- **ID (maximum drain current)**: 260A
- **Technology**: Trench
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Domain and module applications：
III. Application fields and module examples
1. **High-efficiency power management system**
NCE30H25D-VB is widely used in high-efficiency power management systems. As a switching element, it controls the connection and disconnection of power supply, improves energy conversion efficiency, and reduces system energy consumption. It is suitable for use in equipment such as servers and computer power supplies.
2. **Motor drive**
This MOSFET can be used for drive control of DC motors and stepper motors, providing precise speed and direction regulation for motors. It is widely used in home appliances, industrial automation, and robotics.
3. **Switching power supply (SMPS)**
NCE30H25D-VB is an ideal choice for switching power supply design. It can maintain low on-resistance and low heat generation under high-frequency operation. It is suitable for power adapters, LED driver power supplies, and chargers.
4. **Battery management system**
In the battery management system, NCE30H25D-VB can be used for battery charge and discharge control, improving battery charging efficiency and service life. It is suitable for electric vehicles and renewable energy storage systems.
5. **Communication equipment**
The device can also be used for power distribution and management in communication equipment to ensure stability and reliability under high load conditions, suitable for modern communication infrastructure, including base stations and data center equipment.
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**Summary**: NCE30H25D-VB performs well in a variety of high-efficiency power electronics applications with its **30V** drain-source voltage, **260A** high current capability and **1.4mΩ** low on-resistance. The TO263 package provides good heat dissipation performance, making it stable under high temperature and high load conditions, becoming an indispensable component in modern power management and control systems.
1. **High-efficiency power management system**
NCE30H25D-VB is widely used in high-efficiency power management systems. As a switching element, it controls the connection and disconnection of power supply, improves energy conversion efficiency, and reduces system energy consumption. It is suitable for use in equipment such as servers and computer power supplies.
2. **Motor drive**
This MOSFET can be used for drive control of DC motors and stepper motors, providing precise speed and direction regulation for motors. It is widely used in home appliances, industrial automation, and robotics.
3. **Switching power supply (SMPS)**
NCE30H25D-VB is an ideal choice for switching power supply design. It can maintain low on-resistance and low heat generation under high-frequency operation. It is suitable for power adapters, LED driver power supplies, and chargers.
4. **Battery management system**
In the battery management system, NCE30H25D-VB can be used for battery charge and discharge control, improving battery charging efficiency and service life. It is suitable for electric vehicles and renewable energy storage systems.
5. **Communication equipment**
The device can also be used for power distribution and management in communication equipment to ensure stability and reliability under high load conditions, suitable for modern communication infrastructure, including base stations and data center equipment.
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**Summary**: NCE30H25D-VB performs well in a variety of high-efficiency power electronics applications with its **30V** drain-source voltage, **260A** high current capability and **1.4mΩ** low on-resistance. The TO263 package provides good heat dissipation performance, making it stable under high temperature and high load conditions, becoming an indispensable component in modern power management and control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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