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NCE30H15K-VB Product details
Back to previous pageProduct introduction：
NCE30H15K-VB is a high-efficiency single N-channel MOSFET in a TO252 package, designed for applications requiring high current and low conduction loss. Its maximum drain-source voltage (VDS) is 30V, and it supports a gate-source voltage (VGS) of ±20V, giving it good flexibility in various power management applications. The turn-on threshold voltage is 1.7V, and the on-resistance is as low as 3mΩ at VGS = 4.5V, and further reduced to 2mΩ at VGS = 10V, significantly reducing conduction losses and improving energy efficiency. In addition, the maximum drain current of this MOSFET is 120A, and the use of Trench technology enables it to perform well in high-speed switching and high-power applications, making it very suitable for modern electronic devices.
2. NCE30H15K-VB
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Parameter value description
Package type TO252 Suitable for high power density package
Configured with single N-channel MOSFET Provides single-channel high-efficiency control
Drain-source voltage (VDS) 30V Maximum voltage difference between drain and source
Gate-source voltage (VGS) ±20V Maximum voltage between gate and source
Turn-on threshold voltage (Vth) 1.7V Minimum voltage required for MOSFET to start conducting
On-resistance (RDS(ON)) 3mΩ (@VGS = 4.5V) Reduce conduction loss and improve efficiency
2mΩ (@VGS = 10V)
Maximum drain current (ID) 120A Maximum continuous current
Technology Trench Optimized design to reduce switching losses
III.
Domain and module applications：
Power Management:
NCE30H15K-VB is particularly suitable for use in switch mode power supplies (SMPS) and DC-DC converters. Its low on-resistance helps improve power conversion efficiency, reduce energy loss, and improve overall performance.
Electric Vehicles:
This MOSFET can be used in the motor control system of electric vehicles to provide stable performance under high load and high frequency environments, improving the energy efficiency and reliability of electric vehicles.
Industrial Automation:
NCE30H15K-VB is an ideal choice for power switches in industrial equipment, capable of controlling motors and other high-power loads to ensure efficient operation and long life of the equipment.
Consumer Electronics:
In computer power supplies, audio systems, and other consumer electronics, NCE30H15K-VB can effectively provide stable power to ensure high efficiency and stability of the equipment.
Data Centers:
This MOSFET is suitable for power management in data centers. It can provide efficient power supply under rapidly changing load conditions and optimize energy use in data centers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
