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NCE30H12K-VB Product details

Product introduction:

**Product Introduction**
NCE30H12K-VB is a high-performance single N-channel MOSFET in a TO252 package, designed for applications requiring high current and low conduction losses. Its drain-to-source voltage (VDS) is 30V, making it suitable for a variety of power management and switching applications. The device has a threshold voltage (Vth) of 1.7V, ensuring that it can turn on quickly at low gate voltages. The on-resistance (RDS(ON)) of the NCE30H12K-VB is 3mΩ at VGS=4.5V, and is even lower at 2mΩ at VGS=10V, which enables it to have extremely low power losses during operation, thereby improving overall switching efficiency. Its maximum drain current (ID) can reach 120A, making it ideal for applications that handle high power requirements, ensuring efficient and stable operation of the equipment.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 30V 1.7V 120A 2mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 30V 1.7V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 30V 1.7V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
**Detailed parameter description**
- **Model**: NCE30H12K-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain to source voltage (VDS)**: 30V
- **Gate to source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 120A
- **Technology**: Trench

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Domain and module applications:

**Application fields and module examples**
NCE30H12K-VB is suitable for multiple fields and modules, including:

1. **Power management**: In high-efficiency DC-DC converters and power regulators, NCE30H12K-VB can effectively regulate voltage and reduce energy loss to ensure efficient operation of the system.

2. **Electric drive**: This MOSFET performs well in applications such as power tools, electric vehicles and industrial motor drives. It can handle currents up to 120A, ensuring the stability and reliability of the equipment under high loads.

3. **LED drive**: In LED lighting and other lighting applications, NCE30H12K-VB can provide precise current control, improve overall brightness and reduce power consumption, extending product life.

4. **Communication equipment**: In various communication equipment and base stations, the device is used for power amplification and power switching to improve the overall efficiency and stability of the system.

5. **Consumer electronics**: In the power management of smartphones, tablets and other consumer electronics, NCE30H12K-VB helps improve power utilization, thereby enhancing the endurance of the device.

6. **Automotive electronics**: This MOSFET is widely used in the power management system of electric and hybrid vehicles, which can effectively improve power efficiency, reduce energy consumption, and enhance the performance of the vehicle.

With its superior performance and wide application adaptability, NCE30H12K-VB has become an indispensable power management component in modern circuit design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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