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NCE30D2519-VB Product details
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NCE30D2519-VB Product Introduction
NCE30D2519-VB is a high-efficiency dual-channel MOSFET in a TO252-4L package and is configured as a common drain N+P channel design. The device supports bipolar voltage (±30V) and performs well in a variety of power management and motor control applications. The threshold voltage (Vth) of NCE30D2519-VB is 1.8V and -1.7V, which is suitable for low-voltage drive requirements. Its on-resistance (RDS(ON)) is 10mΩ (N channel) and 35mΩ (P channel) at VGS of 4.5V, and 7mΩ (N channel) and 25mΩ (P channel) at VGS of 10V. The maximum drain current (ID) of this MOSFET is 65A (N channel) and -35A (P channel), enabling it to operate reliably in high current applications. The device uses advanced Trench technology to ensure low conduction losses and high switching efficiency.
NCE30D2519-VB is a high-efficiency dual-channel MOSFET in a TO252-4L package and is configured as a common drain N+P channel design. The device supports bipolar voltage (±30V) and performs well in a variety of power management and motor control applications. The threshold voltage (Vth) of NCE30D2519-VB is 1.8V and -1.7V, which is suitable for low-voltage drive requirements. Its on-resistance (RDS(ON)) is 10mΩ (N channel) and 35mΩ (P channel) at VGS of 4.5V, and 7mΩ (N channel) and 25mΩ (P channel) at VGS of 10V. The maximum drain current (ID) of this MOSFET is 65A (N channel) and -35A (P channel), enabling it to operate reliably in high current applications. The device uses advanced Trench technology to ensure low conduction losses and high switching efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±30V | 1.8/-1.7V | 65/-35A | 7/25mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±30V | 1.8/-1.7V | 65/-35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±30V | 1.8/-1.7V | 65/-35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P |
NCE30D2519-VB Detailed parameter description
| Parameter | Description |
|----------------------|----------------------------|
| **Model** | NCE30D2519-VB |
| **Package** | TO252-4L |
| **Configuration** | Common drain (N+P channel) |
| **Maximum VDS** | ±30V |
| **Maximum VGS** | ±20V |
| **Threshold voltage (Vth)** | 1.8V / -1.7V |
| **On-resistance (RDS(ON))** | 10mΩ / 35mΩ @ VGS = 4.5V |
| **On-resistance (RDS(ON))** | 7mΩ / 25mΩ @ VGS = 10V |
| **Maximum leakage current (ID)** | 65A / -35A |
| **Technology** | Trench |
| Parameter | Description |
|----------------------|----------------------------|
| **Model** | NCE30D2519-VB |
| **Package** | TO252-4L |
| **Configuration** | Common drain (N+P channel) |
| **Maximum VDS** | ±30V |
| **Maximum VGS** | ±20V |
| **Threshold voltage (Vth)** | 1.8V / -1.7V |
| **On-resistance (RDS(ON))** | 10mΩ / 35mΩ @ VGS = 4.5V |
| **On-resistance (RDS(ON))** | 7mΩ / 25mΩ @ VGS = 10V |
| **Maximum leakage current (ID)** | 65A / -35A |
| **Technology** | Trench |
Domain and module applications：
Applications and module examples
1. **Power management**: NCE30D2519-VB can be widely used in power management modules. As an efficient switching element, it can provide excellent performance in DC-DC converters and power supplies, ensuring high energy efficiency and stability.
2. **Motor control**: In motor drive systems, this MOSFET is suitable for the control of DC motors and stepper motors. It achieves efficient current control through common drain configuration, which is suitable for robots, automation equipment and home appliances.
3. **Inverter**: The device performs well in inverter applications and can handle bipolar voltages. It is suitable for solar inverters and other renewable energy systems to improve overall energy efficiency.
4. **LED driver**: NCE30D2519-VB can be used in LED driver circuits to ensure fast switching and dimming control of high-power LEDs, suitable for various lighting solutions.
5. **Automotive Electronics**: In automotive electronic systems, this MOSFET is suitable for battery management, power distribution and load control, supporting high current handling capabilities to ensure system safety and efficient operation.
Through the above application examples, NCE30D2519-VB shows its wide applicability in modern electronic design and becomes an ideal choice for high-performance and high-reliability systems.
1. **Power management**: NCE30D2519-VB can be widely used in power management modules. As an efficient switching element, it can provide excellent performance in DC-DC converters and power supplies, ensuring high energy efficiency and stability.
2. **Motor control**: In motor drive systems, this MOSFET is suitable for the control of DC motors and stepper motors. It achieves efficient current control through common drain configuration, which is suitable for robots, automation equipment and home appliances.
3. **Inverter**: The device performs well in inverter applications and can handle bipolar voltages. It is suitable for solar inverters and other renewable energy systems to improve overall energy efficiency.
4. **LED driver**: NCE30D2519-VB can be used in LED driver circuits to ensure fast switching and dimming control of high-power LEDs, suitable for various lighting solutions.
5. **Automotive Electronics**: In automotive electronic systems, this MOSFET is suitable for battery management, power distribution and load control, supporting high current handling capabilities to ensure system safety and efficient operation.
Through the above application examples, NCE30D2519-VB shows its wide applicability in modern electronic design and becomes an ideal choice for high-performance and high-reliability systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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