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NCE30D2519K-VB Product details
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Product Introduction
NCE30D2519K-VB is a high-performance common-drain N+P channel MOSFET in **TO252-4L package**, designed for bipolar power applications. Its drain-source voltage (VDS) can reach ±30V, suitable for power management and switching applications. The device has a threshold voltage (Vth) of 1.8V (N channel) and -1.7V (P channel), providing good control characteristics. When the gate-source voltage (VGS) is 4.5V, the on-resistance of the N channel and P channel is 10mΩ and 35mΩ respectively, which is further reduced to 7mΩ and 25mΩ when VGS is 10V. This enables the NCE30D2519K-VB to effectively reduce power consumption under high current conditions (the maximum ID of the N channel is 65A and the maximum ID of the P channel is -35A), improving the overall efficiency and reliability of the system.
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NCE30D2519K-VB is a high-performance common-drain N+P channel MOSFET in **TO252-4L package**, designed for bipolar power applications. Its drain-source voltage (VDS) can reach ±30V, suitable for power management and switching applications. The device has a threshold voltage (Vth) of 1.8V (N channel) and -1.7V (P channel), providing good control characteristics. When the gate-source voltage (VGS) is 4.5V, the on-resistance of the N channel and P channel is 10mΩ and 35mΩ respectively, which is further reduced to 7mΩ and 25mΩ when VGS is 10V. This enables the NCE30D2519K-VB to effectively reduce power consumption under high current conditions (the maximum ID of the N channel is 65A and the maximum ID of the P channel is -35A), improving the overall efficiency and reliability of the system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±30V | 1.8/-1.7V | 65/-35A | 7/25mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±30V | 1.8/-1.7V | 65/-35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±30V | 1.8/-1.7V | 65/-35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P |
Detailed parameter description
- **Model**: NCE30D2519K-VB
- **Package**: TO252-4L
- **Configuration**: Common drain N+P channel
- **Drain-source voltage (VDS)**: ±30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**:
- N channel: 1.8V
- P channel: -1.7V
- **On-resistance (RDS(ON))**:
- N channel:
- 10mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- P channel:
- 35mΩ @ VGS = 4.5V
- 25mΩ @ VGS = 10V
- **Leakage current (ID)**:
- N channel: 65A
- P channel: -35A
- **Technology**: Trench
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- **Model**: NCE30D2519K-VB
- **Package**: TO252-4L
- **Configuration**: Common drain N+P channel
- **Drain-source voltage (VDS)**: ±30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**:
- N channel: 1.8V
- P channel: -1.7V
- **On-resistance (RDS(ON))**:
- N channel:
- 10mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- P channel:
- 35mΩ @ VGS = 4.5V
- 25mΩ @ VGS = 10V
- **Leakage current (ID)**:
- N channel: 65A
- P channel: -35A
- **Technology**: Trench
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Domain and module applications：
Applications and modules
1. **Power management**
NCE30D2519K-VB is suitable for various power management systems, such as DC-DC converters and linear regulators. In these applications, MOSFET can efficiently control the switching state of the power supply, improve the conversion efficiency of the system, and effectively reduce heat generation.
2. **Motor drive**
This MOSFET is very suitable for motor drive circuits, especially in H-bridge drive configuration. Its high current handling capability and low on-resistance ensure efficient start-stop and speed control of the motor, and is widely used in home appliances, industrial equipment and electric vehicles.
3. **LED drive circuit**
NCE30D2519K-VB can be used in LED drive applications to provide stable current output and ensure uniform brightness of LED lighting, which is commonly found in automotive lighting, backlighting, and indoor and outdoor lighting systems.
4. **Battery management system**
In battery management systems, this MOSFET can be used to monitor and manage the charging and discharging process of the battery. Its fast switching characteristics help improve the efficiency of battery charging and discharging, and is suitable for use in electric vehicles and renewable energy systems.
5. **Switching Power Supply**
NCE30D2519K-VB plays an important role in switching power supply design, providing high-frequency switching performance, suitable for high-efficiency power modules such as adapters and chargers.
With its **excellent current handling capability and excellent thermal management performance**, NCE30D2519K-VB performs well in various high-power and high-efficiency applications and is an ideal choice.
1. **Power management**
NCE30D2519K-VB is suitable for various power management systems, such as DC-DC converters and linear regulators. In these applications, MOSFET can efficiently control the switching state of the power supply, improve the conversion efficiency of the system, and effectively reduce heat generation.
2. **Motor drive**
This MOSFET is very suitable for motor drive circuits, especially in H-bridge drive configuration. Its high current handling capability and low on-resistance ensure efficient start-stop and speed control of the motor, and is widely used in home appliances, industrial equipment and electric vehicles.
3. **LED drive circuit**
NCE30D2519K-VB can be used in LED drive applications to provide stable current output and ensure uniform brightness of LED lighting, which is commonly found in automotive lighting, backlighting, and indoor and outdoor lighting systems.
4. **Battery management system**
In battery management systems, this MOSFET can be used to monitor and manage the charging and discharging process of the battery. Its fast switching characteristics help improve the efficiency of battery charging and discharging, and is suitable for use in electric vehicles and renewable energy systems.
5. **Switching Power Supply**
NCE30D2519K-VB plays an important role in switching power supply design, providing high-frequency switching performance, suitable for high-efficiency power modules such as adapters and chargers.
With its **excellent current handling capability and excellent thermal management performance**, NCE30D2519K-VB performs well in various high-power and high-efficiency applications and is an ideal choice.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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