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NCE3080K-VB Product details

Product introduction:

The following is detailed product information of the **NCE3080K-VB** MOSFET, including product introduction, parameter description, and examples of application fields and modules.

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### 1. Product Introduction
**NCE3080K-VB** is a high-performance **single N-channel MOSFET**, using **TO252** package, with **30V** drain-source voltage (VDS) and up to **100A** leakage current capability. Its **threshold voltage (Vth)** is **1.7V**, which enables it to turn on quickly at a lower gate-source voltage. Using **Trench technology**, the on-resistance (RDS(ON)) is as low as **2mΩ** at **VGS = 10V**, ensuring excellent performance in high-power applications. NCE3080K-VB is particularly suitable for power management, DC motor control and high-efficiency switching power supplies, which can improve system efficiency and reduce energy consumption.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 30V 1.7V 100A 2mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 30V 1.7V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 30V 1.7V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N

### 2. Detailed parameter description
- **Model**: NCE3080K-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON) (on-resistance)**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **ID (maximum drain current)**: 100A
- **Technology**: Trench

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Domain and module applications:

III. Application fields and module examples
1. **Power management system**
NCE3080K-VB is widely used in power management systems. As a switching element, it controls the connection and disconnection of power supply, improves energy conversion efficiency, reduces system loss, and is suitable for portable and consumer electronic devices.

2. **Motor drive**
This MOSFET can be used to control DC motors in the field of motor drive, providing precise speed and direction control. It is widely used in household appliances, toys, and industrial automation equipment.

3. **Switching power supply (SMPS)**
NCE3080K-VB is very suitable for switching power supply design. Through its excellent current switching capability, it can meet the requirements of high-frequency operation and low heat generation, optimize power efficiency, and improve overall performance.

4. **LED drive circuit**
In LED drive applications, NCE3080K-VB can be used to adjust LED brightness and switch. With its low on-resistance and fast response characteristics, it can achieve efficient lighting solutions and is suitable for various lighting systems.

5. **Communication equipment**
The device can also be used for power distribution and management of communication equipment to ensure stability and reliability under high load conditions, suitable for modern communication infrastructure.

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**Summary**: NCE3080K-VB performs well in a variety of high-efficiency power electronic applications with its **30V** drain-source voltage, **100A** high current capability and **2mΩ** low on-resistance. The TO252 package provides excellent heat dissipation characteristics for the device, ensuring its reliability under high temperature and high load conditions, and is an indispensable key component in modern power management and control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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