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NCE3080I-VB Product details
Back to previous pageProduct introduction：
1. NCE3080I-VB Product Introduction
NCE3080I-VB is a high-performance **single N-channel MOSFET**, using **TO251 package**, designed for high-efficiency and high-power applications. The **maximum drain-source voltage (VDS)** of this device is **30V**, and it can withstand a gate-source voltage (VGS)** of up to **±20V. Its turn-on threshold voltage is **1.7V**, and the on-resistance is as low as **4.5mΩ** at **VGS = 4.5V**, and further reduced to **3.5mΩ** at **VGS = 10V**, thereby significantly reducing conduction losses and improving the energy efficiency of the system. In addition, the maximum drain current of this MOSFET is **100A**, and the **Trench technology** is used, which makes it excellent in high-speed switching and power management, suitable for various high-load applications.
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NCE3080I-VB is a high-performance **single N-channel MOSFET**, using **TO251 package**, designed for high-efficiency and high-power applications. The **maximum drain-source voltage (VDS)** of this device is **30V**, and it can withstand a gate-source voltage (VGS)** of up to **±20V. Its turn-on threshold voltage is **1.7V**, and the on-resistance is as low as **4.5mΩ** at **VGS = 4.5V**, and further reduced to **3.5mΩ** at **VGS = 10V**, thereby significantly reducing conduction losses and improving the energy efficiency of the system. In addition, the maximum drain current of this MOSFET is **100A**, and the **Trench technology** is used, which makes it excellent in high-speed switching and power management, suitable for various high-load applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | 3.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
II. NCE3080I-VB Detailed Parameters
| **Parameter** | **Value** | **Description** |
|------------------------|----------------------------|----------------------------------|
| **Package Type** | TO251 | Small and efficient package for high-density applications|
| **Configuration** | Single N-channel MOSFET | Provides single-channel high-efficiency control|
| **Drain-Source Voltage (VDS)** | 30V | Maximum Drain-Source Voltage Difference|
| **Gate-Source Voltage (VGS)** | ±20V | Maximum Gate-Source Voltage|
| **Turning Threshold Voltage (Vth)** | 1.7V | Minimum voltage required for MOSFET to start conducting|
| **On-Resistance (RDS(ON))** | 4.5mΩ (@VGS = 4.5V) | Reduce conduction loss and improve efficiency|
| | 3.5mΩ (@VGS = 10V) | |
| **Maximum Drain Current (ID)** | 100A | Maximum Continuous Current|
| **Technology** | Trench | Optimized design to reduce switching losses|
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| **Parameter** | **Value** | **Description** |
|------------------------|----------------------------|----------------------------------|
| **Package Type** | TO251 | Small and efficient package for high-density applications|
| **Configuration** | Single N-channel MOSFET | Provides single-channel high-efficiency control|
| **Drain-Source Voltage (VDS)** | 30V | Maximum Drain-Source Voltage Difference|
| **Gate-Source Voltage (VGS)** | ±20V | Maximum Gate-Source Voltage|
| **Turning Threshold Voltage (Vth)** | 1.7V | Minimum voltage required for MOSFET to start conducting|
| **On-Resistance (RDS(ON))** | 4.5mΩ (@VGS = 4.5V) | Reduce conduction loss and improve efficiency|
| | 3.5mΩ (@VGS = 10V) | |
| **Maximum Drain Current (ID)** | 100A | Maximum Continuous Current|
| **Technology** | Trench | Optimized design to reduce switching losses|
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Domain and module applications：
III. Application Fields and Modules
1. **Power Management:**
NCE3080I-VB performs well in **switching power supplies (SMPS)** and **DC-DC converters**, can effectively reduce conduction losses, improve overall energy efficiency, and is suitable for high-efficiency power supply designs.
2. **Electric Vehicles:**
This MOSFET is suitable for **electric vehicle motor drive and charging systems**, and can provide reliable performance in high-frequency and high-power environments to improve vehicle energy efficiency.
3. **Industrial Control:**
NCE3080I-VB can be used as a power switch in **industrial automation equipment** to control motors and other high-power loads to ensure system reliability and efficiency.
4. **Consumer Electronics:**
In **computer power supplies, audio systems** and other consumer electronics products, NCE3080I-VB can achieve high-efficiency power conversion, provide stable power supply, and ensure long-term stable operation of equipment.
5. **Data Centers:**
This MOSFET is suitable for **data center power management systems**, which can maintain efficient power supply under rapidly changing load conditions, thereby optimizing data center energy consumption.
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With its excellent performance and reliability, NCE3080I-VB has become an ideal N-channel MOSFET for a variety of high-efficiency applications, which can effectively meet the stringent requirements of different industries for power management and energy efficiency.
1. **Power Management:**
NCE3080I-VB performs well in **switching power supplies (SMPS)** and **DC-DC converters**, can effectively reduce conduction losses, improve overall energy efficiency, and is suitable for high-efficiency power supply designs.
2. **Electric Vehicles:**
This MOSFET is suitable for **electric vehicle motor drive and charging systems**, and can provide reliable performance in high-frequency and high-power environments to improve vehicle energy efficiency.
3. **Industrial Control:**
NCE3080I-VB can be used as a power switch in **industrial automation equipment** to control motors and other high-power loads to ensure system reliability and efficiency.
4. **Consumer Electronics:**
In **computer power supplies, audio systems** and other consumer electronics products, NCE3080I-VB can achieve high-efficiency power conversion, provide stable power supply, and ensure long-term stable operation of equipment.
5. **Data Centers:**
This MOSFET is suitable for **data center power management systems**, which can maintain efficient power supply under rapidly changing load conditions, thereby optimizing data center energy consumption.
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With its excellent performance and reliability, NCE3080I-VB has become an ideal N-channel MOSFET for a variety of high-efficiency applications, which can effectively meet the stringent requirements of different industries for power management and energy efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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