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NCE3080IA-VB Product details
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NCE3080IA-VB Product Introduction
NCE3080IA-VB is a high-efficiency single N-channel MOSFET in TO251 package, designed for low voltage, high current applications. The device has a drain-source voltage (V_DS) of up to 30V, a gate-source voltage (V_GS) of ±20V, and a threshold voltage (V_th) of 1.7V. At V_GS of 4.5V, its on-resistance (R_DS(ON)) is 4.5mΩ, which drops to 3.5mΩ at V_GS of 10V. With a maximum drain current of 100A and Trench technology, the NCE3080IA-VB has excellent switching performance and heat dissipation capabilities, making it ideal for power management and control systems.
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NCE3080IA-VB is a high-efficiency single N-channel MOSFET in TO251 package, designed for low voltage, high current applications. The device has a drain-source voltage (V_DS) of up to 30V, a gate-source voltage (V_GS) of ±20V, and a threshold voltage (V_th) of 1.7V. At V_GS of 4.5V, its on-resistance (R_DS(ON)) is 4.5mΩ, which drops to 3.5mΩ at V_GS of 10V. With a maximum drain current of 100A and Trench technology, the NCE3080IA-VB has excellent switching performance and heat dissipation capabilities, making it ideal for power management and control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | 3.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: NCE3080IA-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 4.5mΩ (at V_GS = 4.5V)
- 3.5mΩ (at V_GS = 10V)
- **Maximum leakage current (I_D)**: 100A
- **Technology**: Trench
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- **Model**: NCE3080IA-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 4.5mΩ (at V_GS = 4.5V)
- 3.5mΩ (at V_GS = 10V)
- **Maximum leakage current (I_D)**: 100A
- **Technology**: Trench
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Domain and module applications：
Applications and module examples
1. **Power management systems**
The NCE3080IA-VB is ideal for use in power management systems, such as switching power supplies and battery chargers. Its low on-resistance characteristics can significantly reduce energy loss and improve overall conversion efficiency, thereby extending the life of the equipment.
2. **Motor drive**
This MOSFET is also suitable for motor drive circuits, such as power tools and household appliances. With its leakage current carrying capacity of up to 100A, the NCE3080IA-VB can ensure stable operation of the motor under high load conditions and achieve efficient control.
3. **LED drive circuit**
The NCE3080IA-VB performs well in LED drive circuits and can effectively control the current of LED lighting systems. Its fast switching characteristics and low heat generation help improve the efficiency and brightness of LEDs.
4. **Battery Management System (BMS)**
This MOSFET is also very important in battery management systems, especially in electric vehicles and energy storage systems. NCE3080IA-VB can effectively protect the battery pack from over-current and over-voltage conditions, improving the safety and reliability of the system.
The high performance, compact design and excellent electrical characteristics of NCE3080IA-VB make it an ideal choice for a variety of power electronics applications, and are widely used in power management, motor drive, LED control and battery management.
1. **Power management systems**
The NCE3080IA-VB is ideal for use in power management systems, such as switching power supplies and battery chargers. Its low on-resistance characteristics can significantly reduce energy loss and improve overall conversion efficiency, thereby extending the life of the equipment.
2. **Motor drive**
This MOSFET is also suitable for motor drive circuits, such as power tools and household appliances. With its leakage current carrying capacity of up to 100A, the NCE3080IA-VB can ensure stable operation of the motor under high load conditions and achieve efficient control.
3. **LED drive circuit**
The NCE3080IA-VB performs well in LED drive circuits and can effectively control the current of LED lighting systems. Its fast switching characteristics and low heat generation help improve the efficiency and brightness of LEDs.
4. **Battery Management System (BMS)**
This MOSFET is also very important in battery management systems, especially in electric vehicles and energy storage systems. NCE3080IA-VB can effectively protect the battery pack from over-current and over-voltage conditions, improving the safety and reliability of the system.
The high performance, compact design and excellent electrical characteristics of NCE3080IA-VB make it an ideal choice for a variety of power electronics applications, and are widely used in power management, motor drive, LED control and battery management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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