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NCE3030K-VB Product details
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1. NCE3030K-VB Product Introduction
NCE3030K-VB is a **single N-channel MOSFET** in **TO252 package**, designed for high-efficiency and high-power applications. The device has a **maximum drain-source voltage (VDS)** of **30V** and can withstand a gate-source voltage (VGS)** of up to **±20V. Its turn-on threshold voltage is **1.7V**, and its on-resistance is **9mΩ** at **VGS = 4.5V**, and further reduced to **7mΩ** at **VGS = 10V**, significantly reducing conduction losses and improving energy efficiency. In addition, the maximum drain current of this MOSFET is **70A**, and it uses **Trench technology**, which makes it excel in high-speed switching and power management.
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NCE3030K-VB is a **single N-channel MOSFET** in **TO252 package**, designed for high-efficiency and high-power applications. The device has a **maximum drain-source voltage (VDS)** of **30V** and can withstand a gate-source voltage (VGS)** of up to **±20V. Its turn-on threshold voltage is **1.7V**, and its on-resistance is **9mΩ** at **VGS = 4.5V**, and further reduced to **7mΩ** at **VGS = 10V**, significantly reducing conduction losses and improving energy efficiency. In addition, the maximum drain current of this MOSFET is **70A**, and it uses **Trench technology**, which makes it excel in high-speed switching and power management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. NCE3030K-VB Detailed Parameters
| **Parameter** | **Value** | **Description** |
|------------------------|----------------------------|----------------------------------|
| **Package Type** | TO252 | Small and efficient package for high-density applications|
| **Configuration** | Single N-channel MOSFET | Provides single-channel high-efficiency control|
| **Drain-Source Voltage (VDS)** | 30V | Maximum Drain-Source Voltage Difference|
| **Gate-Source Voltage (VGS)** | ±20V | Maximum Gate-Source Voltage|
| **Turning Threshold Voltage (Vth)** | 1.7V | Minimum voltage required for MOSFET to start conducting|
| **On-Resistance (RDS(ON))** | 9mΩ (@VGS = 4.5V) | Reduce conduction loss and improve efficiency|
| | 7mΩ (@VGS = 10V） | |
| **Maximum Drain Current (ID)** | 70A | Maximum Continuous Current|
| **Technology** | Trench | Optimized Design to Reduce Switching Losses|
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| **Parameter** | **Value** | **Description** |
|------------------------|----------------------------|----------------------------------|
| **Package Type** | TO252 | Small and efficient package for high-density applications|
| **Configuration** | Single N-channel MOSFET | Provides single-channel high-efficiency control|
| **Drain-Source Voltage (VDS)** | 30V | Maximum Drain-Source Voltage Difference|
| **Gate-Source Voltage (VGS)** | ±20V | Maximum Gate-Source Voltage|
| **Turning Threshold Voltage (Vth)** | 1.7V | Minimum voltage required for MOSFET to start conducting|
| **On-Resistance (RDS(ON))** | 9mΩ (@VGS = 4.5V) | Reduce conduction loss and improve efficiency|
| | 7mΩ (@VGS = 10V） | |
| **Maximum Drain Current (ID)** | 70A | Maximum Continuous Current|
| **Technology** | Trench | Optimized Design to Reduce Switching Losses|
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Domain and module applications：
III. Application Fields and Modules
1. **Switching Power Supplies and Power Management:**
With its low on-resistance and high current carrying capacity, NCE3030K-VB is suitable for **switching power supplies (SMPS)** and **DC-DC converters**, which can effectively improve energy efficiency and reduce energy loss.
2. **Electric Vehicles:**
This MOSFET can meet the high power requirements of motor control and charging systems in **electric vehicles**, improve overall efficiency and performance, and is suitable for high-frequency switching operations.
3. **Industrial Automation and Control Systems:**
In **industrial equipment**, NCE3030K-VB can be used as a **power switch** to control motors and other high-power loads to ensure reliability and efficiency.
4. **Consumer Electronics:**
In consumer electronics products such as **audio equipment and computer power supplies**, this MOSFET can achieve high-efficiency power conversion, providing users with stable power supply and long device life.
5. **Data Centers and Servers:**
NCE3030K-VB is suitable for **high-efficiency server power management**, maintaining stable power supply under fast-fluctuating loads and optimizing energy consumption in data centers.
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NCE3030K-VB is an N-channel MOSFET suitable for a variety of high-efficiency applications. Its low conduction loss and superior current capability make it an indispensable and important device in modern electronic design, which can effectively meet the needs of power management and efficiency in many industries.
1. **Switching Power Supplies and Power Management:**
With its low on-resistance and high current carrying capacity, NCE3030K-VB is suitable for **switching power supplies (SMPS)** and **DC-DC converters**, which can effectively improve energy efficiency and reduce energy loss.
2. **Electric Vehicles:**
This MOSFET can meet the high power requirements of motor control and charging systems in **electric vehicles**, improve overall efficiency and performance, and is suitable for high-frequency switching operations.
3. **Industrial Automation and Control Systems:**
In **industrial equipment**, NCE3030K-VB can be used as a **power switch** to control motors and other high-power loads to ensure reliability and efficiency.
4. **Consumer Electronics:**
In consumer electronics products such as **audio equipment and computer power supplies**, this MOSFET can achieve high-efficiency power conversion, providing users with stable power supply and long device life.
5. **Data Centers and Servers:**
NCE3030K-VB is suitable for **high-efficiency server power management**, maintaining stable power supply under fast-fluctuating loads and optimizing energy consumption in data centers.
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NCE3030K-VB is an N-channel MOSFET suitable for a variety of high-efficiency applications. Its low conduction loss and superior current capability make it an indispensable and important device in modern electronic design, which can effectively meet the needs of power management and efficiency in many industries.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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