NCE3008M-VB Product details
Product introduction:
NCE3008M-VB is a high-performance single N-channel power MOSFET in a compact SOT89 package, designed for low- to medium-voltage and medium-current applications. With a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) range of ±20V, the device can operate stably in a wide range of electrical environments. Its threshold voltage (Vth) is 1.7V, ensuring effective conduction at a relatively low gate voltage. The on-resistance (RDS(ON)) of the NCE3008M-VB is 30mΩ at a VGS of 2.5V, and drops to 22mΩ at a VGS of 4.5V, supporting a continuous drain current (ID) of up to 6.8A. The use of advanced Trench technology makes this MOSFET excel in fast switching and high efficiency, suitable for a variety of electronic circuit designs.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N |
- **Model**: NCE3008M-VB
- **Package**: SOT89
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 30mΩ @ VGS = 2.5V
- 22mΩ @ VGS = 4.5V
- **Continuous leakage current (ID)**: 6.8A
- **Maximum power dissipation (Ptot)**: Suitable for medium power applications
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench
Domain and module applications:
NCE3008M-VB has demonstrated excellent performance in multiple fields and modules. The main applications include:
1. **Portable electronic devices**: Due to its low on-resistance and good switching characteristics, NCE3008M-VB is very suitable for power management systems of smartphones, tablets and other portable electronic devices, helping to improve energy efficiency and extend battery life.
2. **LED driver**: In LED lighting and driver modules, NCE3008M-VB can efficiently drive LEDs, provide stable current, and ensure the brightness and energy efficiency of lamps are optimized.
3. **Battery Management System (BMS)**: This MOSFET can be used to manage battery charging and discharging, optimize current flow, ensure battery safety and efficiency during charging and discharging, and improve battery life.
4. **DC-DC Converter**: NCE3008M-VB can be widely used in DC-DC converters, supporting efficient power regulation, suitable for computers, communication equipment and various consumer electronics products.
5. **Power Tools and Small Motor Drive**: Due to its high current carrying capacity, NCE3008M-VB can be used as a switching element in power tools and small motor controls to ensure efficient and reliable operation of the motor.
Through its excellent performance, NCE3008M-VB becomes an ideal choice for low-medium voltage and medium current applications.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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