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NCE20H20-VB Product details

Product introduction:

1. NCE20H20-VB Product Introduction
NCE20H20-VB is a **single N-channel MOSFET** in **TO220 package**. The device has **30V drain-source voltage (VDS)** and **±20V gate-source voltage (VGS)**, and its turn-on threshold voltage is **1.7V**. At **VGS = 4.5V**, its on-resistance is only **2.2mΩ**, and it is reduced to **1mΩ** at **VGS = 10V**, making the product have extremely low conduction loss and suitable for high-current applications. The maximum drain current can reach **260A**, and the **Trench technology** is used, which makes it perform well in high-frequency and high-efficiency power management and switching circuits.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 30V 1.7V 260A 1mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 30V 1.7V 260A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 30V 1.7V 260A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
II. NCE20H20-VB Detailed Parameters

| **Parameter** | **Value** | **Description** |
|------------------------|----------------------------|----------------------------------|
| **Package Type** | TO220 | Standard package for high-power applications|
| **Configuration** | Single N-channel MOSFET | Provides single-channel high-efficiency control|
| **Drain-Source Voltage (VDS)** | 30V | Maximum Drain-Source Voltage Difference|
| **Gate-Source Voltage (VGS)** | ±20V | Maximum Gate-Source Voltage|
| **Turning Threshold Voltage (Vth)** | 1.7V | Minimum voltage required for MOSFET to start conducting|
| **On-Resistance (RDS(ON))** | 2.2mΩ (@VGS = 4.5V) | Reduces conduction losses and improves efficiency|
| | 1mΩ (@VGS = 10V) | |
| **Maximum Drain Current (ID)** | 260A | Maximum Continuous Current|
| **Technology** | Trench | Optimized design to reduce switching losses|

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Domain and module applications:

3. Application Fields and Modules

1. **Power Management and Switching Power Supplies:**
NCE20H20-VB is very suitable for use in **switching power supplies (SMPS)** due to its low on-resistance and high drain current capability, providing efficient power conversion and reducing system power consumption.

2. **Electric and Hybrid Vehicles:**
This MOSFET can support **high-power drive circuits** in electric vehicles, such as motor control and charging systems, to improve energy efficiency and performance.

3. **Industrial Automation:**
In industrial control and automation systems, NCE20H20-VB can be used as a **power switching element** to control motors and other high-power devices for efficient and reliable operation.

4. **Data Center and Server Power Supplies:**
In server power management, this MOSFET can be used in **high-efficiency DC-DC converters**, supporting fast and stable power supply to meet the needs of high-power loads.

5. **Consumer Electronics:**
NCE20H20-VB can be used in **high-efficiency audio systems and computer power supplies**, ensuring the stability and efficiency of power transmission and providing users with a better user experience.

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NCE20H20-VB is an N-channel MOSFET that performs well in high-power and high-efficiency applications. With its low conduction loss and high current capability, it can meet the power management and efficiency requirements of modern electronic devices and is suitable for a wide range of applications in multiple industries.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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