中文
English
NCE20H11K-VB Product details
Back to previous pageProduct introduction：
NCE20H11K-VB Product Introduction
NCE20H11K-VB is a high-efficiency single N-channel power MOSFET in TO252 package, designed for low voltage and high current applications. With a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) range of ±20V, the device is suitable for a variety of electrical application environments. Its threshold voltage (Vth) is between 0.5V and 1.5V, ensuring rapid conduction even at lower gate voltages. The on-resistance (RDS(ON)) of NCE20H11K-VB is 3.5mΩ at VGS of 2.5V, and is lower at 2.5mΩ at VGS of 4.5V, supporting a continuous drain current (ID) of up to 120A. The use of advanced Trench technology makes this MOSFET perform well in switching characteristics and thermal performance, and is widely used in power management, motor drive and other high-efficiency circuit designs.
NCE20H11K-VB is a high-efficiency single N-channel power MOSFET in TO252 package, designed for low voltage and high current applications. With a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) range of ±20V, the device is suitable for a variety of electrical application environments. Its threshold voltage (Vth) is between 0.5V and 1.5V, ensuring rapid conduction even at lower gate voltages. The on-resistance (RDS(ON)) of NCE20H11K-VB is 3.5mΩ at VGS of 2.5V, and is lower at 2.5mΩ at VGS of 4.5V, supporting a continuous drain current (ID) of up to 120A. The use of advanced Trench technology makes this MOSFET perform well in switching characteristics and thermal performance, and is widely used in power management, motor drive and other high-efficiency circuit designs.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | 3.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: NCE20H11K-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V to 1.5V
- **On-resistance (RDS(ON))**:
- 3.5mΩ @ VGS = 2.5V
- 2.5mΩ @ VGS = 4.5V
- **Continuous leakage current (ID)**: 120A
- **Maximum power dissipation (Ptot)**: Suitable for high power applications
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench
- **Model**: NCE20H11K-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V to 1.5V
- **On-resistance (RDS(ON))**:
- 3.5mΩ @ VGS = 2.5V
- 2.5mΩ @ VGS = 4.5V
- **Continuous leakage current (ID)**: 120A
- **Maximum power dissipation (Ptot)**: Suitable for high power applications
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
NCE20H11K-VB demonstrates excellent performance in multiple fields and modules. The main applications include:
1. **Power management**: This MOSFET is widely used in switching power supplies (SMPS) to achieve efficient power conversion and regulation in industrial and consumer electronic devices, which can reduce energy consumption and improve system efficiency.
2. **Electric vehicles (EV)**: In the power system of electric vehicles, NCE20H11K-VB can be used as a switching element in motor drive and battery management systems to improve the energy efficiency and response speed of the system and enhance the performance of the whole vehicle.
3. **Motor control**: Due to its high current carrying capacity, NCE20H11K-VB can be widely used in various motor drive systems to ensure smooth operation of the motor and improve overall efficiency. It is suitable for use in robots and automation equipment.
4. **DC-DC Converter**: NCE20H11K-VB can be used in various DC-DC converter designs, supports efficient power regulation, and is widely used in communication equipment, computers, and other electronic products.
5. **LED Driver**: This MOSFET is also suitable for use in LED driver circuits, ensuring stable brightness and optimal energy efficiency of LED lamps by efficiently regulating current.
With its excellent electrical performance and wide range of applications, NCE20H11K-VB is an ideal choice for low voltage, high current applications.
NCE20H11K-VB demonstrates excellent performance in multiple fields and modules. The main applications include:
1. **Power management**: This MOSFET is widely used in switching power supplies (SMPS) to achieve efficient power conversion and regulation in industrial and consumer electronic devices, which can reduce energy consumption and improve system efficiency.
2. **Electric vehicles (EV)**: In the power system of electric vehicles, NCE20H11K-VB can be used as a switching element in motor drive and battery management systems to improve the energy efficiency and response speed of the system and enhance the performance of the whole vehicle.
3. **Motor control**: Due to its high current carrying capacity, NCE20H11K-VB can be widely used in various motor drive systems to ensure smooth operation of the motor and improve overall efficiency. It is suitable for use in robots and automation equipment.
4. **DC-DC Converter**: NCE20H11K-VB can be used in various DC-DC converter designs, supports efficient power regulation, and is widely used in communication equipment, computers, and other electronic products.
5. **LED Driver**: This MOSFET is also suitable for use in LED driver circuits, ensuring stable brightness and optimal energy efficiency of LED lamps by efficiently regulating current.
With its excellent electrical performance and wide range of applications, NCE20H11K-VB is an ideal choice for low voltage, high current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
