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NCE2025I-VB Product details

Product introduction:

The following is detailed product information of the **NCE2025I-VB** MOSFET, including product introduction, parameter description, and examples of application areas and modules.

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### 1. Product Introduction
**NCE2025I-VB** is a high-efficiency **single N-channel MOSFET** in a **TO251** package with a **30V** drain-source voltage (VDS) and **50A** high leakage current capability. The **threshold voltage (Vth)** of this device is **1.7V**, which enables fast turn-on under low voltage conditions. Using **Trench technology**, the on-resistance (RDS(ON)) is only **7mΩ** at **VGS = 10V**, which makes it perform well in power management and power electronics applications. NCE2025I-VB is suitable for a variety of high-efficiency power and control applications, providing reliable current delivery and low-energy operation.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-N 30V 1.7V 50A 7mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO251 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO251 Single-N 30V 1.7V 50A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO251 Single-N 30V 1.7V 50A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO251 Single-N

### 2. Detailed parameter description
- **Model**: NCE2025I-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON) (on-resistance)**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **ID (maximum drain current)**: 50A
- **Technology**: Trench

Domain and module applications:

III. Application fields and module examples
1. **Switching power supply (SMPS)**
NCE2025I-VB is suitable for high-efficiency switching power supply design. As the main switching element, it improves the conversion efficiency of the power supply through its low on-resistance and high current capability, reduces energy loss and heat generation.

2. **Motor driver**
This MOSFET can be used in motor drive applications, especially in the scenario of high-efficiency motor drive, to provide stable current output, effectively realize the start and stop and speed control of the motor, and meet the requirements of high dynamic response.

3. **LED drive circuit**
NCE2025I-VB can be used in the drive circuit of LED lighting, realize dimming control through PWM modulation, and improve the energy efficiency and service life of LED lighting system with its fast switching characteristics and low energy consumption characteristics.

4. **DC-DC Converter**
In the DC-DC converter, NCE2025I-VB, as a high-frequency switching device, effectively realizes the step-up or step-down of DC voltage, improves the flexibility and efficiency of the power system, and is widely used in portable devices and battery management systems.

5. **Power Management System**
This device is suitable for power management systems, especially in applications that require fast switching and high current handling. The low on-resistance of NCE2025I-VB ensures that losses are minimized during power switching.

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**Summary**: With its high voltage of **30V**, high current capability of **50A** and low on-resistance of **7mΩ**, NCE2025I-VB shows significant advantages in a variety of high-performance power electronic applications. The TO251 package provides good heat dissipation for the device, ensuring its stable operation in various harsh environments. It is an indispensable component in modern power management and control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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