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NCE2011E-VB Product details
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NCE2011E-VB Product Introduction
NCE2011E-VB is a high-efficiency **Common Drain-N+N-Channel MOSFET**, which adopts **TSSOP8 package** and is designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is **20V**, making it suitable for many portable and low-power electronic devices. The gate-source threshold voltage (Vth) range of the device is **0.5V to 1.5V**, ensuring fast switching operation at low voltage. The on-resistance (RDS(ON)) of NCE2011E-VB is only **7mΩ** at **VGS = 2.5V**, and is lower to **5mΩ** at **VGS = 4.5V**, making it excellent in power loss and efficiency, and the maximum drain current (ID) can reach **11A**. Using **Trench technology**, NCE2011E-VB has significant advantages in high-frequency switching and thermal management, and is widely used in power management, load switching and other small electronic modules.
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NCE2011E-VB is a high-efficiency **Common Drain-N+N-Channel MOSFET**, which adopts **TSSOP8 package** and is designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is **20V**, making it suitable for many portable and low-power electronic devices. The gate-source threshold voltage (Vth) range of the device is **0.5V to 1.5V**, ensuring fast switching operation at low voltage. The on-resistance (RDS(ON)) of NCE2011E-VB is only **7mΩ** at **VGS = 2.5V**, and is lower to **5mΩ** at **VGS = 4.5V**, making it excellent in power loss and efficiency, and the maximum drain current (ID) can reach **11A**. Using **Trench technology**, NCE2011E-VB has significant advantages in high-frequency switching and thermal management, and is widely used in power management, load switching and other small electronic modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 11A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 11A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 11A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
Detailed parameter description
- **Model**: NCE2011E-VB
- **Package**: TSSOP8
- **Configuration**: Common Drain-N+N-Channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS = 2.5V
- 5mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 11A
- **Technology**: Trench
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- **Model**: NCE2011E-VB
- **Package**: TSSOP8
- **Configuration**: Common Drain-N+N-Channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS = 2.5V
- 5mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 11A
- **Technology**: Trench
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Domain and module applications：
Application fields and module examples
NCE2011E-VB MOSFET is suitable for application in multiple fields and modules due to its low voltage, high current and low on-resistance. Here are some typical application examples:
1. **Power management**: In power conversion and management circuits, this MOSFET can be used as an efficient switching element and is widely used in power modules for mobile phone chargers, tablets and portable electronic devices.
2. **Load switch**: Suitable for load switching circuits, NCE2011E-VB can be used as a switch to control power to achieve fast response and high efficiency, suitable for home appliances, automotive electronics and industrial equipment.
3. **LED driver**: In LED lighting applications, this MOSFET can provide stable current, ensure high brightness and long life, and is suitable for indoor lighting, automotive lighting and other high-power LED applications.
4. **Motor drive**: In small motor control, the NCE2011E-VB can efficiently control the start and stop of the motor, improve the overall efficiency of the motor drive system, and is suitable for power tools, home appliances and other fields.
5. **Portable electronic devices**: Due to its compact TSSOP8 package, this MOSFET is particularly suitable for space-constrained portable electronic devices such as smart watches and wearable devices, ensuring reliable performance and thermal management.
Through these applications, the NCE2011E-VB MOSFET demonstrates its importance in modern electronic design, meeting the market needs for high efficiency, low power consumption and compact design.
NCE2011E-VB MOSFET is suitable for application in multiple fields and modules due to its low voltage, high current and low on-resistance. Here are some typical application examples:
1. **Power management**: In power conversion and management circuits, this MOSFET can be used as an efficient switching element and is widely used in power modules for mobile phone chargers, tablets and portable electronic devices.
2. **Load switch**: Suitable for load switching circuits, NCE2011E-VB can be used as a switch to control power to achieve fast response and high efficiency, suitable for home appliances, automotive electronics and industrial equipment.
3. **LED driver**: In LED lighting applications, this MOSFET can provide stable current, ensure high brightness and long life, and is suitable for indoor lighting, automotive lighting and other high-power LED applications.
4. **Motor drive**: In small motor control, the NCE2011E-VB can efficiently control the start and stop of the motor, improve the overall efficiency of the motor drive system, and is suitable for power tools, home appliances and other fields.
5. **Portable electronic devices**: Due to its compact TSSOP8 package, this MOSFET is particularly suitable for space-constrained portable electronic devices such as smart watches and wearable devices, ensuring reliable performance and thermal management.
Through these applications, the NCE2011E-VB MOSFET demonstrates its importance in modern electronic design, meeting the market needs for high efficiency, low power consumption and compact design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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