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NCE2010E-VB Product details
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1. NCE2010E-VB Product Introduction
NCE2010E-VB is a **common source configuration N+N-channel MOSFET** in **TSSOP8 package**. The device has **20V drain-source voltage (VDS)** and **±12V gate-source voltage (VGS)**, suitable for a variety of low-voltage applications. Its turn-on threshold voltage range is **0.5V to 1.5V**, the on-resistance is **18mΩ** at **VGS = 2.5V**, and **14mΩ** at **VGS = 4.5V**, and the maximum drain current can reach **7.6A**. Using **Trench technology**, NCE2010E-VB has excellent conductivity and low conduction loss, suitable for high-frequency switching and power management fields.
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NCE2010E-VB is a **common source configuration N+N-channel MOSFET** in **TSSOP8 package**. The device has **20V drain-source voltage (VDS)** and **±12V gate-source voltage (VGS)**, suitable for a variety of low-voltage applications. Its turn-on threshold voltage range is **0.5V to 1.5V**, the on-resistance is **18mΩ** at **VGS = 2.5V**, and **14mΩ** at **VGS = 4.5V**, and the maximum drain current can reach **7.6A**. Using **Trench technology**, NCE2010E-VB has excellent conductivity and low conduction loss, suitable for high-frequency switching and power management fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
II. NCE2010E-VB Detailed Parameters
| **Parameter** | **Value** | **Description** |
|------------------------|----------------------------|----------------------------------|
| **Package Type** | TSSOP8 | Compact package, suitable for high-density circuit design|
| **Configuration** | Common source configuration N+N-channel MOSFET | Provides dual-channel control|
| **Drain-Source Voltage (VDS)** | 20V | Maximum voltage difference between drain and source|
| **Gate-Source Voltage (VGS)** | ±12V | Maximum voltage between gate and source|
| **Turning Threshold Voltage (Vth)** | 0.5~1.5V | Minimum voltage required for MOSFET to start conducting|
| **On-resistance (RDS(ON))** | 18mΩ (@VGS = 2.5V) | Improve efficiency and reduce energy consumption|
| | 14mΩ (@VGS = 4.5V) | |
| **Maximum Drain Current (ID)** | 7.6A | Maximum Continuous Current|
| **Technology** | Trench | Optimized design to reduce switching losses|
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| **Parameter** | **Value** | **Description** |
|------------------------|----------------------------|----------------------------------|
| **Package Type** | TSSOP8 | Compact package, suitable for high-density circuit design|
| **Configuration** | Common source configuration N+N-channel MOSFET | Provides dual-channel control|
| **Drain-Source Voltage (VDS)** | 20V | Maximum voltage difference between drain and source|
| **Gate-Source Voltage (VGS)** | ±12V | Maximum voltage between gate and source|
| **Turning Threshold Voltage (Vth)** | 0.5~1.5V | Minimum voltage required for MOSFET to start conducting|
| **On-resistance (RDS(ON))** | 18mΩ (@VGS = 2.5V) | Improve efficiency and reduce energy consumption|
| | 14mΩ (@VGS = 4.5V) | |
| **Maximum Drain Current (ID)** | 7.6A | Maximum Continuous Current|
| **Technology** | Trench | Optimized design to reduce switching losses|
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Domain and module applications：
III. Application Fields and Modules
1. **Power Management and DC-DC Converters:**
NCE2010E-VB is suitable for use as a switching element in **power management units**, achieving efficient energy conversion in switching power supplies and DC-DC converters, providing regulated output and superior energy efficiency.
2. **Portable Electronic Devices:**
In mobile phones, tablets and other portable electronic devices, this MOSFET can be used for **power control and battery management**, helping to extend the battery life of the device and improve overall performance.
3. **LED Driver Circuits:**
NCE2010E-VB can be used as a switching element in **LED lighting systems**, supporting efficient current regulation to ensure the brightness and life of the LED.
4. **Power Tools and Small Appliances:**
This MOSFET is suitable for **motor control and switching power supply** of power tools and small appliances, providing stable current and high efficiency to meet instantaneous load requirements.
5. **Telecommunications Equipment:**
NCE2010E-VB can also be used in **power amplifiers** in wireless communication equipment as a switching element to improve signal amplification efficiency and support high-frequency signal transmission.
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NCE2010E-VB is a powerful N+N-channel MOSFET. With its excellent performance and wide range of applications, it can meet the power management and efficiency requirements of modern electronic products and is suitable for a variety of industries and application scenarios.
1. **Power Management and DC-DC Converters:**
NCE2010E-VB is suitable for use as a switching element in **power management units**, achieving efficient energy conversion in switching power supplies and DC-DC converters, providing regulated output and superior energy efficiency.
2. **Portable Electronic Devices:**
In mobile phones, tablets and other portable electronic devices, this MOSFET can be used for **power control and battery management**, helping to extend the battery life of the device and improve overall performance.
3. **LED Driver Circuits:**
NCE2010E-VB can be used as a switching element in **LED lighting systems**, supporting efficient current regulation to ensure the brightness and life of the LED.
4. **Power Tools and Small Appliances:**
This MOSFET is suitable for **motor control and switching power supply** of power tools and small appliances, providing stable current and high efficiency to meet instantaneous load requirements.
5. **Telecommunications Equipment:**
NCE2010E-VB can also be used in **power amplifiers** in wireless communication equipment as a switching element to improve signal amplification efficiency and support high-frequency signal transmission.
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NCE2010E-VB is a powerful N+N-channel MOSFET. With its excellent performance and wide range of applications, it can meet the power management and efficiency requirements of modern electronic products and is suitable for a variety of industries and application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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