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NCE2008E-VB Product details
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NCE2008E-VB Product Introduction
NCE2008E-VB is a high-efficiency common-source-common-drain N+N channel MOSFET in TSSOP8 package, designed for low-voltage applications. The device has a drain-source voltage (V_DS) of up to 20V, a gate-source voltage (V_GS) of ±20V, and a threshold voltage (V_th) of 0.5V to 1.5V. At V_GS of 2.5V, its on-resistance (R_DS(ON)) is 32mΩ, which drops to 22mΩ at V_GS of 4.5V. Based on Trench technology, this MOSFET has fast switching capability and excellent thermal performance, and is suitable for a wide range of low-voltage power conversion and control applications.
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NCE2008E-VB is a high-efficiency common-source-common-drain N+N channel MOSFET in TSSOP8 package, designed for low-voltage applications. The device has a drain-source voltage (V_DS) of up to 20V, a gate-source voltage (V_GS) of ±20V, and a threshold voltage (V_th) of 0.5V to 1.5V. At V_GS of 2.5V, its on-resistance (R_DS(ON)) is 32mΩ, which drops to 22mΩ at V_GS of 4.5V. Based on Trench technology, this MOSFET has fast switching capability and excellent thermal performance, and is suitable for a wide range of low-voltage power conversion and control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
Detailed parameter description
- **Model**: NCE2008E-VB
- **Package**: TSSOP8
- **Configuration**: Common source-common drain type N+N channel
- **Drain-source voltage (V_DS)**: 20V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 0.5V ~ 1.5V
- **On-resistance (R_DS(ON))**:
- 32mΩ (at V_GS = 2.5V)
- 22mΩ (at V_GS = 4.5V)
- **Maximum leakage current (I_D)**: 6.6A
- **Technology**: Trench
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- **Model**: NCE2008E-VB
- **Package**: TSSOP8
- **Configuration**: Common source-common drain type N+N channel
- **Drain-source voltage (V_DS)**: 20V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 0.5V ~ 1.5V
- **On-resistance (R_DS(ON))**:
- 32mΩ (at V_GS = 2.5V)
- 22mΩ (at V_GS = 4.5V)
- **Maximum leakage current (I_D)**: 6.6A
- **Technology**: Trench
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Domain and module applications：
Applications and module examples
1. **Portable electronic devices**
NCE2008E-VB is suitable for portable electronic devices such as smartphones, tablets and wearable devices. Its low on-resistance and high efficiency help extend battery life and improve the overall performance of the device.
2. **Switching Power Supply (SMPS)**
In low-power switching power supplies, this MOSFET can be used as a switching element for applications such as LED drivers and power adapters. Its fast switching capability and low loss characteristics can improve the conversion efficiency of the power supply.
3. **Motor drive circuits**
NCE2008E-VB can be used in small motor drive circuits. It can withstand leakage currents up to 6.6A and is suitable for applications such as electric toys, power tools and household appliances to ensure efficient motor control and operation.
4. **Battery Management System (BMS)**
This MOSFET also has important applications in battery management systems, especially in protection circuits to prevent overcurrent and overvoltage, ensuring the safety and reliability of battery packs. Its miniaturized design is suitable for use in compact battery management modules.
The high performance, compact package and versatility of NCE2008E-VB make it an ideal choice for a variety of low-voltage applications, and are widely used in portable electronic devices, switching power supplies, motor drives and battery management.
1. **Portable electronic devices**
NCE2008E-VB is suitable for portable electronic devices such as smartphones, tablets and wearable devices. Its low on-resistance and high efficiency help extend battery life and improve the overall performance of the device.
2. **Switching Power Supply (SMPS)**
In low-power switching power supplies, this MOSFET can be used as a switching element for applications such as LED drivers and power adapters. Its fast switching capability and low loss characteristics can improve the conversion efficiency of the power supply.
3. **Motor drive circuits**
NCE2008E-VB can be used in small motor drive circuits. It can withstand leakage currents up to 6.6A and is suitable for applications such as electric toys, power tools and household appliances to ensure efficient motor control and operation.
4. **Battery Management System (BMS)**
This MOSFET also has important applications in battery management systems, especially in protection circuits to prevent overcurrent and overvoltage, ensuring the safety and reliability of battery packs. Its miniaturized design is suitable for use in compact battery management modules.
The high performance, compact package and versatility of NCE2008E-VB make it an ideal choice for a variety of low-voltage applications, and are widely used in portable electronic devices, switching power supplies, motor drives and battery management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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