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NCE2007N-VB Product details
Back to previous pageProduct introduction：
**Product Introduction**
NCE2007N-VB is a high-performance dual N-channel MOSFET in a SOT23-6 package, optimized for space-limited and high-efficiency circuit designs. The device has a drain-to-source voltage (VDS) of 20V, making it suitable for low-voltage applications. Its threshold voltage (Vth) ranges from 0.5V to 1.5V, allowing it to turn on quickly at a lower gate voltage. The on-resistance (RDS(ON)) is 28mΩ at VGS=2.5V and can be reduced to 22mΩ at VGS=4.5V, providing excellent current transfer efficiency. The maximum drain current (ID) of NCE2007N-VB can reach 6A, making it suitable for applications with high power requirements. The Trench technology it uses ensures efficient switching performance and excellent thermal management characteristics.
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NCE2007N-VB is a high-performance dual N-channel MOSFET in a SOT23-6 package, optimized for space-limited and high-efficiency circuit designs. The device has a drain-to-source voltage (VDS) of 20V, making it suitable for low-voltage applications. Its threshold voltage (Vth) ranges from 0.5V to 1.5V, allowing it to turn on quickly at a lower gate voltage. The on-resistance (RDS(ON)) is 28mΩ at VGS=2.5V and can be reduced to 22mΩ at VGS=4.5V, providing excellent current transfer efficiency. The maximum drain current (ID) of NCE2007N-VB can reach 6A, making it suitable for applications with high power requirements. The Trench technology it uses ensures efficient switching performance and excellent thermal management characteristics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
**Detailed parameter description**
- **Model**: NCE2007N-VB
- **Package**: SOT23-6
- **Configuration**: Dual N-channel
- **Drain to source voltage (VDS)**: 20V
- **Gate to source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 28mΩ @ VGS = 2.5V
- 22mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 6A
- **Technology**: Trench
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- **Model**: NCE2007N-VB
- **Package**: SOT23-6
- **Configuration**: Dual N-channel
- **Drain to source voltage (VDS)**: 20V
- **Gate to source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 28mΩ @ VGS = 2.5V
- 22mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 6A
- **Technology**: Trench
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Domain and module applications：
**Applications and Module Examples**
NCE2007N-VB is suitable for a variety of applications, including:
1. **Portable Devices**: This MOSFET can be used as a switch in smartphones, tablets, and wearable devices, providing low power consumption and high-efficiency power management.
2. **LED Driver Circuit**: In LED lighting and display drivers, NCE2007N-VB can effectively regulate current to ensure consistent brightness and low power consumption.
3. **Power Management IC**: It can be used in power management integrated circuits to provide efficient voltage regulation and current control, suitable for a variety of electronic devices.
4. **Small Motor Driver**: This device is suitable for micro motor drive circuits and can withstand 6A current to meet the needs of high power loads.
5. **Battery Management System**: In lithium battery charge and discharge management, NCE2007N-VB provides efficient switch control to optimize battery efficiency and extend battery life.
6. **Automation equipment**: It can be applied to the control module of industrial automation equipment to help achieve efficient power conversion and current control.
With its excellent performance and flexible application, NCE2007N-VB is an indispensable and important part of modern electronic circuits.
NCE2007N-VB is suitable for a variety of applications, including:
1. **Portable Devices**: This MOSFET can be used as a switch in smartphones, tablets, and wearable devices, providing low power consumption and high-efficiency power management.
2. **LED Driver Circuit**: In LED lighting and display drivers, NCE2007N-VB can effectively regulate current to ensure consistent brightness and low power consumption.
3. **Power Management IC**: It can be used in power management integrated circuits to provide efficient voltage regulation and current control, suitable for a variety of electronic devices.
4. **Small Motor Driver**: This device is suitable for micro motor drive circuits and can withstand 6A current to meet the needs of high power loads.
5. **Battery Management System**: In lithium battery charge and discharge management, NCE2007N-VB provides efficient switch control to optimize battery efficiency and extend battery life.
6. **Automation equipment**: It can be applied to the control module of industrial automation equipment to help achieve efficient power conversion and current control.
With its excellent performance and flexible application, NCE2007N-VB is an indispensable and important part of modern electronic circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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