NCE2006NE-VB Product details
Product introduction:
NCE2006NE-VB is a high-performance dual N-channel power MOSFET in SOT23-6 package, designed for low voltage and high-efficiency applications. The device has a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) range of ±12V, with good switching characteristics. Its threshold voltage (Vth) is between 0.5V and 1.5V, ensuring effective conduction at a lower gate voltage. The on-resistance (RDS(ON)) of NCE2006NE-VB is 28mΩ at VGS of 2.5V, and drops to 22mΩ at VGS of 4.5V, supporting a continuous drain current (ID) of up to 6A. The use of advanced Trench technology gives it excellent efficiency and thermal performance in fast switching applications, making it suitable for a variety of electronic circuit designs.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
- **Model**: NCE2006NE-VB
- **Package**: SOT23-6
- **Configuration**: Dual N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V to 1.5V
- **On-resistance (RDS(ON))**:
- 28mΩ @ VGS = 2.5V
- 22mΩ @ VGS = 4.5V
- **Continuous leakage current (ID)**: 6A
- **Maximum power dissipation (Ptot)**: Suitable for low power applications
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench
Domain and module applications:
NCE2006NE-VB performs well in multiple fields and modules, and its main applications include:
1. **Portable electronic devices**: Due to its low on-resistance and good switching characteristics, NCE2006NE-VB is very suitable for power management systems in smartphones, tablets and other portable electronic devices, helping to extend battery life and improve energy efficiency.
2. **LED driver**: In LED lighting modules, NCE2006NE-VB can be used to drive and regulate current to achieve efficient light source control and brightness adjustment, ensuring stable operation of lamps.
3. **Battery Management System (BMS)**: This MOSFET can be used for battery charging and discharging management, optimizing current flow, protecting batteries from damage caused by overcharging and over-discharging, and improving battery life and safety.
4. **DC-DC Converter**: NCE2006NE-VB can be widely used in various DC-DC converter designs, supporting efficient power conversion and voltage regulation, suitable for computers, communication equipment and consumer electronics.
5. **Motor Drive**: In small motor control applications, NCE2006NE-VB can be used as a switching element to provide efficient motor drive to ensure the reliability and efficiency of motor operation.
Through its excellent performance, NCE2006NE-VB performs well in a variety of applications and is an ideal choice for low-voltage, high-efficiency applications.
Technical support:
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