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NCE2006NE-VB Product details

Product introduction:

NCE2006NE-VB Product Introduction

NCE2006NE-VB is a high-performance dual N-channel power MOSFET in SOT23-6 package, designed for low voltage and high-efficiency applications. The device has a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) range of ±12V, with good switching characteristics. Its threshold voltage (Vth) is between 0.5V and 1.5V, ensuring effective conduction at a lower gate voltage. The on-resistance (RDS(ON)) of NCE2006NE-VB is 28mΩ at VGS of 2.5V, and drops to 22mΩ at VGS of 4.5V, supporting a continuous drain current (ID) of up to 6A. The use of advanced Trench technology gives it excellent efficiency and thermal performance in fast switching applications, making it suitable for a variety of electronic circuit designs.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-6 Dual-N+N 20V 0.5~1.5V 6A 28mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT23-6 Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT23-6 Dual-N+N 20V 0.5~1.5V 6A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT23-6 Dual-N+N 20V 0.5~1.5V 6A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT23-6 Dual-N+N
Detailed parameter description

- **Model**: NCE2006NE-VB
- **Package**: SOT23-6
- **Configuration**: Dual N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V to 1.5V
- **On-resistance (RDS(ON))**:
- 28mΩ @ VGS = 2.5V
- 22mΩ @ VGS = 4.5V
- **Continuous leakage current (ID)**: 6A
- **Maximum power dissipation (Ptot)**: Suitable for low power applications
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench

Domain and module applications:

Applicable fields and modules

NCE2006NE-VB performs well in multiple fields and modules, and its main applications include:

1. **Portable electronic devices**: Due to its low on-resistance and good switching characteristics, NCE2006NE-VB is very suitable for power management systems in smartphones, tablets and other portable electronic devices, helping to extend battery life and improve energy efficiency.

2. **LED driver**: In LED lighting modules, NCE2006NE-VB can be used to drive and regulate current to achieve efficient light source control and brightness adjustment, ensuring stable operation of lamps.

3. **Battery Management System (BMS)**: This MOSFET can be used for battery charging and discharging management, optimizing current flow, protecting batteries from damage caused by overcharging and over-discharging, and improving battery life and safety.

4. **DC-DC Converter**: NCE2006NE-VB can be widely used in various DC-DC converter designs, supporting efficient power conversion and voltage regulation, suitable for computers, communication equipment and consumer electronics.

5. **Motor Drive**: In small motor control applications, NCE2006NE-VB can be used as a switching element to provide efficient motor drive to ensure the reliability and efficiency of motor operation.

Through its excellent performance, NCE2006NE-VB performs well in a variety of applications and is an ideal choice for low-voltage, high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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