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NCE2004NE-VB Product details
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Product Introduction: NCE2004NE-VB MOSFET
NCE2004NE-VB is a high-performance dual N-channel MOSFET in SOT23-6 package, designed for efficient power switching applications. Its maximum drain-source voltage (VDS) is 20V, and it supports gate-source voltage (VGS) up to ±12V, which is suitable for a variety of power management and drive circuits. The device has a threshold voltage (Vth) range of 0.5V to 1.5V, ensuring reliable conduction at lower voltages. Its on-resistance (RDS(ON)) is 28mΩ (@VGS=2.5V) and 22mΩ (@VGS=4.5V), respectively, and it exhibits excellent conductive performance when the maximum drain current (ID) can reach 6A. NCE2004NE-VB uses Trench technology, which greatly reduces switching losses and improves the efficiency of the overall system. It is widely used in consumer electronics, communication equipment, automotive electronics and other fields.
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NCE2004NE-VB is a high-performance dual N-channel MOSFET in SOT23-6 package, designed for efficient power switching applications. Its maximum drain-source voltage (VDS) is 20V, and it supports gate-source voltage (VGS) up to ±12V, which is suitable for a variety of power management and drive circuits. The device has a threshold voltage (Vth) range of 0.5V to 1.5V, ensuring reliable conduction at lower voltages. Its on-resistance (RDS(ON)) is 28mΩ (@VGS=2.5V) and 22mΩ (@VGS=4.5V), respectively, and it exhibits excellent conductive performance when the maximum drain current (ID) can reach 6A. NCE2004NE-VB uses Trench technology, which greatly reduces switching losses and improves the efficiency of the overall system. It is widely used in consumer electronics, communication equipment, automotive electronics and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
Detailed parameter description
- **Model**: NCE2004NE-VB
- **Package**: SOT23-6
- **Configuration**: Dual N-channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- @VGS = 2.5V: 28mΩ
- @VGS = 4.5V: 22mΩ
- **Maximum drain current (ID)**: 6A
- **Technology**: Trench
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- **Model**: NCE2004NE-VB
- **Package**: SOT23-6
- **Configuration**: Dual N-channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- @VGS = 2.5V: 28mΩ
- @VGS = 4.5V: 22mΩ
- **Maximum drain current (ID)**: 6A
- **Technology**: Trench
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Domain and module applications：
Applications and Module Examples
1. **Power Management**:
NCE2004NE-VB is widely used in various power management circuits, such as DC-DC converters and linear regulators. Due to its low on-resistance and high efficiency, it can reduce power consumption and improve energy efficiency in power supply design.
2. **Consumer Electronics**:
This MOSFET is suitable for power switching in consumer electronics products, such as smartphones, tablets and other portable devices. In these applications, NCE2004NE-VB can effectively manage battery power and extend the battery life of the device.
3. **LED Drive Circuit**:
NCE2004NE-VB can be used in LED drivers as a switching element to achieve efficient LED lighting control. It can switch quickly at a low gate voltage to ensure stable brightness of the LED.
4. **Automotive electronics**:
In the automotive electronics field, NCE2004NE-VB can be used for motor drives and various control modules, such as power windows, seat adjustment and lighting control. Its high current carrying capacity and reliability make it an ideal choice for automotive applications.
5. **Wireless communications**:
This device can be used in wireless communication equipment as a switch for RF power amplifiers to improve signal transmission efficiency and system performance. In these applications, NCE2004NE-VB helps achieve higher data transmission rates.
Through its excellent performance and diverse applications, NCE2004NE-VB plays a key role in modern electronic devices, meeting the needs of high efficiency and miniaturization in different fields.
1. **Power Management**:
NCE2004NE-VB is widely used in various power management circuits, such as DC-DC converters and linear regulators. Due to its low on-resistance and high efficiency, it can reduce power consumption and improve energy efficiency in power supply design.
2. **Consumer Electronics**:
This MOSFET is suitable for power switching in consumer electronics products, such as smartphones, tablets and other portable devices. In these applications, NCE2004NE-VB can effectively manage battery power and extend the battery life of the device.
3. **LED Drive Circuit**:
NCE2004NE-VB can be used in LED drivers as a switching element to achieve efficient LED lighting control. It can switch quickly at a low gate voltage to ensure stable brightness of the LED.
4. **Automotive electronics**:
In the automotive electronics field, NCE2004NE-VB can be used for motor drives and various control modules, such as power windows, seat adjustment and lighting control. Its high current carrying capacity and reliability make it an ideal choice for automotive applications.
5. **Wireless communications**:
This device can be used in wireless communication equipment as a switch for RF power amplifiers to improve signal transmission efficiency and system performance. In these applications, NCE2004NE-VB helps achieve higher data transmission rates.
Through its excellent performance and diverse applications, NCE2004NE-VB plays a key role in modern electronic devices, meeting the needs of high efficiency and miniaturization in different fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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