Product introduction：
NCE1205-VB is a dual N+P channel MOSFET in a DFN6(2X2)-B package, designed for high performance and high density applications. Its maximum drain-source voltage (V\(_{DS}\)) is ±30V, suitable for operation in a variety of electrical environments. The device has a gate-source voltage (V\(_{GS}\)) of ±20V, providing good operational flexibility. The threshold voltage (V\(_{th}\)) is 1.6V (N channel) and -1.7V (P channel), ensuring that it can be effectively turned on at a lower voltage. Under V\(_{GS}\) = 10V, the on-resistance (R\(_{DS(ON)}\)) is 18mΩ (N channel) and 32mΩ (P channel), supporting a maximum drain current of ±7A. This MOSFET adopts **Trench** trench technology, with low power consumption and high efficiency, it is ideal for various applications such as power management, motor drive and signal switching.
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## 2. NCE1205-VB
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN6(2X2)-B |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±7A |
|
|
18/32mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN6(2X2)-B |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN6(2X2)-B |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±7A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN6(2X2)-B |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±7A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN6(2X2)-B |
Dual-N+P |
|
|
|
|
|
|
|
| **Parameter** | **Value** | **Description** |
|-----------------------|----------------------------------|--------------------------------------------------|
| **Package** | DFN6(2X2)-B | Small package, suitable for high-density circuits|
| **Configuration** | Dual N+P channel | Provides both N-type and P-type MOSFETs, facilitating a variety of circuit designs|
| **V\(_{DS}\)** | ±30V | Supports bidirectional voltage applications|
| **V\(_{GS}\)** | ±20V | High gate withstand voltage, adaptable to complex electrical environments|
| **Threshold voltage (V\(_{th}\))** | 1.6V (N) / -1.7V (P) | Turn-on voltages for N-type and P-type devices are respectively|
| **R\(_{DS(ON)}\)** | 24mΩ / 40mΩ @ V\(_{GS}\) = 4.5V | On-resistance at low gate voltage|
| **R\(_{DS(ON)}\)** | 18mΩ / 32mΩ @ V\(_{GS}\) = 10V | On-resistance at standard gate voltage|
| **Maximum drain current (I\(_{D}\))** | ±7A | Can drive higher current loads|
| **Technology** | Trench type | Provides high performance and high reliability solutions|
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## III. NCE1205-VB
Domain and module applications：
Examples
1. **Power management and conversion**
NCE1205-VB can be used in **DC-DC converters** and **switching power supplies** as an efficient switching element to improve power efficiency and reduce losses.
2. **Motor drive control**
In **motor drive** applications, NCE1205-VB can be used to drive **DC motors** and **stepper motors**, providing stable current and control, suitable for robots and automation equipment.
3. **Signal switching and switching**
The device is suitable for **signal switching**, achieving fast switching in low voltage and high current applications, and is widely used in communication and data processing equipment.
4. **LED lighting driver**
NCE1205-VB can also be used in **LED lighting** applications as a driver element to provide stable current to ensure long life and high brightness of LEDs.
5. **Automotive electronics**
In the **automotive electronics** field, this MOSFET can be used in battery management systems, power conversion modules, and other high-efficiency power management applications to ensure the stability and reliability of electrical systems.
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NCE1205-VB has demonstrated superior performance and reliability in multiple fields with its **±30V high voltage withstand capability** and **±7A current drive capability**. Its small package and dual N+P channel configuration make it widely applicable in applications such as power management, motor drive, and signal switching, making it an ideal choice for efficient circuit design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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