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NCE02H10T-VB Product details

Product introduction:

NCE02H10T-VB Product Introduction

NCE02H10T-VB is a high-performance unipolar N-type MOSFET in a **TO247** package, specially designed for high voltage and high current applications. The device has a maximum drain-source voltage (VDS) of **200V**, which can operate stably in harsh environments. Its maximum gate-source voltage (VGS) can reach **±20V**, providing flexibility for circuit design. The on-resistance (RDS(ON)) of this MOSFET is **21mΩ** at VGS = 10V, ensuring low power consumption and high efficiency. The maximum drain current (ID) is **96A**, enabling it to meet high power requirements. With **Trench technology**, NCE02H10T-VB provides excellent switching performance and thermal management, and is widely used in high-efficiency power solutions and various power control systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 200V 4V 96A 21mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 200V 4V 96A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 200V 4V 96A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
Detailed parameter description

| **Parameter** | **Value** |
|--------------------------|-------------------------|
| **Model** | NCE02H10T-VB |
| **Package** | TO247 |
| **Configuration** | Unipolar N-type|
| **Maximum drain-source voltage (VDS)** | 200V |
| **Maximum gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 4V |
| **On-resistance (RDS(ON))** | 21mΩ @ VGS = 10V |
| **Maximum drain current (ID)** | 96A |
| **Technology** | Trench |

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Domain and module applications:

Applicable fields and modules

1. **Power converter**
NCE02H10T-VB is very suitable for high-efficiency DC-DC converters and AC-DC switching power supplies. Its high voltage and high current capabilities ensure the stability and high efficiency of the power system and significantly reduce energy loss.

2. **Industrial drive control**
In industrial automation equipment, this MOSFET can be used in motor drive and control modules to provide stable and reliable power switches to meet the operating requirements of high-power motors and ensure the efficiency and safety of equipment.

3. **Renewable energy system**
NCE02H10T-VB is suitable for photovoltaic inverters and wind energy conversion systems. As a switching element, it can efficiently manage and control energy flow and improve the overall efficiency of the system.

4. **Electric vehicles and battery management systems (BMS)**
This device plays an important role in electric vehicles and their battery management systems, supporting the conversion and control of high voltage and high current to ensure the safety and efficient use of batteries.

5. **Power Management IC**
NCE02H10T-VB is also suitable for various power management integrated circuits, as a switching element to achieve efficient power control, ensuring system stability and efficiency.

With its excellent performance, NCE02H10T-VB shows excellent value in demanding applications and is an ideal choice for high-performance design and development.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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