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NCE01P18L-VB Product details
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1. NCE01P18L-VB Product Introduction
NCE01P18L-VB is a **single P-channel MOSFET** in **TO-251 package**, supporting **-100V drain-source voltage (VDS)** and **±20V gate-source voltage (VGS)**. Its trench technology design provides low on-resistance and high current handling capability, suitable for power management, load switching, automotive electronics and other scenarios. The P-channel configuration of this device is suitable for reverse current control and low-side switching applications, simplifying the drive circuit design.
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NCE01P18L-VB is a **single P-channel MOSFET** in **TO-251 package**, supporting **-100V drain-source voltage (VDS)** and **±20V gate-source voltage (VGS)**. Its trench technology design provides low on-resistance and high current handling capability, suitable for power management, load switching, automotive electronics and other scenarios. The P-channel configuration of this device is suitable for reverse current control and low-side switching applications, simplifying the drive circuit design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -100V | -2V | -16A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
II. NCE01P18L-VB Detailed Parameters
| **Parameter** | **Value** | **Description** |
|------------------------|----------------------------|----------------------------------|
| **Package Type** | TO-251 | Through-hole package with excellent heat dissipation performance|
| **Configuration** | Single P-channel MOSFET | Suitable for low-side load switching and reverse protection|
| **Drain-Source Voltage (VDS)** | -100V | Maximum Drain-Source Voltage Difference|
| **Gate-Source Voltage (VGS)** | ±20V | Maximum Allowable Voltage Between Gate and Source|
| **Turning Threshold Voltage (Vth)** | -2V | Minimum voltage required for MOSFET to start conducting|
| **On-Resistance (RDS(ON))** | 120mΩ (@VGS = 4.5V) | On-Resistance at Medium Drive|
| | 100mΩ (@VGS = 10V) | On-resistance at high drive voltage|
| **Maximum drain current (ID)** | -16A | Maximum continuous current|
| **Technology** | Trench | Trench process optimizes conduction loss and switching speed|
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| **Parameter** | **Value** | **Description** |
|------------------------|----------------------------|----------------------------------|
| **Package Type** | TO-251 | Through-hole package with excellent heat dissipation performance|
| **Configuration** | Single P-channel MOSFET | Suitable for low-side load switching and reverse protection|
| **Drain-Source Voltage (VDS)** | -100V | Maximum Drain-Source Voltage Difference|
| **Gate-Source Voltage (VGS)** | ±20V | Maximum Allowable Voltage Between Gate and Source|
| **Turning Threshold Voltage (Vth)** | -2V | Minimum voltage required for MOSFET to start conducting|
| **On-Resistance (RDS(ON))** | 120mΩ (@VGS = 4.5V) | On-Resistance at Medium Drive|
| | 100mΩ (@VGS = 10V) | On-resistance at high drive voltage|
| **Maximum drain current (ID)** | -16A | Maximum continuous current|
| **Technology** | Trench | Trench process optimizes conduction loss and switching speed|
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Domain and module applications：
3. Application Fields and Modules
1. **Power Management Units:**
NCE01P18L-VB is used as an efficient switch in **DC-DC converters** and **voltage regulator circuits** to reduce energy loss. In addition, it is also widely used in **battery protection circuits** to prevent overcharging or reverse current from damaging the battery.
2. **Load Switching:**
Due to its P-channel characteristics and low on-resistance, this device is used to control motor starting and load switching in home appliances such as **air conditioners and motors**. It is also used to drive solenoid valves and relays in **industrial automation equipment**.
3. **Automotive Electronic Systems:**
In **window, seat adjustment** and car lighting systems, MOSFET is used to control the opening and closing of current. In addition, in **battery management systems (BMS), NCE01P18L-VB can be used as an isolation switch for high-voltage circuits to ensure system safety.
4. **Reverse Polarity Protection:**
This device is suitable for **power adapters** and **portable power tools** to prevent damage caused by reverse power polarity and protect key components in the equipment.
5. **Communication and Networking Devices:**
MOSFET is used for power supply path switching of wireless communication equipment, and can achieve efficient redundant power switching in **base station and switch** circuits.
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NCE01P18L-VB is a highly reliable P-channel MOSFET, widely used in power management, automotive electronics and communication equipment. With its low conduction loss and compact package, it provides a reliable solution for various load control and protection scenarios.
1. **Power Management Units:**
NCE01P18L-VB is used as an efficient switch in **DC-DC converters** and **voltage regulator circuits** to reduce energy loss. In addition, it is also widely used in **battery protection circuits** to prevent overcharging or reverse current from damaging the battery.
2. **Load Switching:**
Due to its P-channel characteristics and low on-resistance, this device is used to control motor starting and load switching in home appliances such as **air conditioners and motors**. It is also used to drive solenoid valves and relays in **industrial automation equipment**.
3. **Automotive Electronic Systems:**
In **window, seat adjustment** and car lighting systems, MOSFET is used to control the opening and closing of current. In addition, in **battery management systems (BMS), NCE01P18L-VB can be used as an isolation switch for high-voltage circuits to ensure system safety.
4. **Reverse Polarity Protection:**
This device is suitable for **power adapters** and **portable power tools** to prevent damage caused by reverse power polarity and protect key components in the equipment.
5. **Communication and Networking Devices:**
MOSFET is used for power supply path switching of wireless communication equipment, and can achieve efficient redundant power switching in **base station and switch** circuits.
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NCE01P18L-VB is a highly reliable P-channel MOSFET, widely used in power management, automotive electronics and communication equipment. With its low conduction loss and compact package, it provides a reliable solution for various load control and protection scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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