NCE01P13K-VB Product details
Product introduction:
NCE01P13K-VB is a high-performance single P-channel MOSFET in TO252 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) can reach -100V, and it can support a gate-source voltage (VGS) of ±20V, and it is stable in various electrical environments. The threshold voltage (Vth) of the device is -2V, which allows it to be efficiently turned on at a lower voltage, suitable for applications with high requirements for current switch response speed.
In the switching state, the on-resistance (RDS(ON)) of NCE01P13K-VB is 100mΩ at VGS=10V, which means that it has low power consumption in high current (ID is -16A) applications, which can effectively reduce system heating and improve overall efficiency. The Trench technology it adopts ensures the superior performance of the device in high-frequency switching and thermal management, and can meet the needs of modern electronic products for high efficiency and high reliability.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
| Parameter | Value|
|------------------|----------------------|
| **Model** | NCE01P13K-VB |
| **Package** | TO252 |
| **Configuration** | Single P Channel|
| **VDS** | -100V |
| **VGS** | ±20V |
| **Threshold Voltage (Vth)** | -2V |
| **On-Resistance (RDS(ON))** | 120mΩ @ VGS=4.5V |
| **On-Resistance (RDS(ON))** | 100mΩ @ VGS=10V |
| **Maximum Drain Current (ID)** | -16A |
| **Technology** | Trench |
Domain and module applications:
1. **Power management module**: NCE01P13K-VB performs well in DC-DC converter and switching power supply design. Its low on-resistance and high current capability help improve energy efficiency, reduce system heat loss, and ensure the stability and reliability of the power supply.
2. **Electric vehicle**: In the battery management system and motor drive module of electric vehicles, NCE01P13K-VB can achieve efficient current control, adapt to the needs of battery charging and discharging, improve the efficiency of battery use, and thus enhance the endurance of electric vehicles.
3. **LED drive circuit**: In LED lighting applications, this MOSFET can be used for current regulation and switch control to ensure the stable brightness of the LED and extend its service life. It is suitable for various lighting systems.
4. **Household appliances**: In household appliances such as washing machines, air conditioners, etc., NCE01P13K-VB can be used as a switching element to provide reliable current control to ensure efficient operation and energy consumption management of the equipment.
5. **Consumer Electronics**: This MOSFET is widely used in power management of smart home devices, audio systems and other consumer electronics products, meeting the design requirements of modern devices for high efficiency and high reliability.
In summary, NCE01P13K-VB is a high-performance P-channel MOSFET that can provide reliable solutions in a variety of high-voltage and high-current applications, meeting the design requirements of harsh working conditions and high efficiency.
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