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NCE01H29T-VB Product details
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Product Introduction
NCE01H29T-VB is a high-efficiency single N-channel MOSFET in TO247 package, designed for high current and high voltage applications. The MOSFET has excellent electrical performance and can operate stably at drain-source voltages up to 100V. Its on-resistance (RDS(ON)) is as low as 2mΩ (at VGS of 10V), ensuring minimal energy loss at high currents. The high rated drain current (ID) of NCE01H29T-VB reaches 320A, making it an ideal choice for power management and high-efficiency switching applications.
NCE01H29T-VB is a high-efficiency single N-channel MOSFET in TO247 package, designed for high current and high voltage applications. The MOSFET has excellent electrical performance and can operate stably at drain-source voltages up to 100V. Its on-resistance (RDS(ON)) is as low as 2mΩ (at VGS of 10V), ensuring minimal energy loss at high currents. The high rated drain current (ID) of NCE01H29T-VB reaches 320A, making it an ideal choice for power management and high-efficiency switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: NCE01H29T-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2mΩ @ VGS = 10V
- **Drain current (ID)**: 320A
- **Technology**: Trench
- **Model**: NCE01H29T-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2mΩ @ VGS = 10V
- **Drain current (ID)**: 320A
- **Technology**: Trench
Domain and module applications：
Applications and modules
NCE01H29T-VB MOSFET is suitable for a variety of applications and modules, including:
1. **Power management**: In high-efficiency DC-DC converters and switching power supplies, this MOSFET can optimize energy conversion and reduce losses, especially in applications that need to handle high power, such as server power supplies and data centers.
2. **Electric vehicles**: NCE01H29T-VB is widely used in battery management systems, drive control and chargers in electric vehicles, and can efficiently manage battery current to ensure vehicle stability and endurance.
3. **Industrial automation**: In industrial equipment, NCE01H29T-VB can be used for motor drive and high-load control, improving the performance and reliability of automation systems, especially in heavy-load applications.
4. **LED drive**: This MOSFET performs well in LED lighting drive circuits, providing stable current to ensure efficient operation and extend the life of LEDs.
5. **High Power Power Module**: NCE01H29T-VB is suitable for the design of high power power modules, such as UPS (Uninterruptible Power Supply) and other power solutions requiring high current and high efficiency.
Through its wide application in these fields, NCE01H29T-VB MOSFET demonstrates its key role in modern high-performance electronic devices, providing efficient and reliable solutions for various applications.
NCE01H29T-VB MOSFET is suitable for a variety of applications and modules, including:
1. **Power management**: In high-efficiency DC-DC converters and switching power supplies, this MOSFET can optimize energy conversion and reduce losses, especially in applications that need to handle high power, such as server power supplies and data centers.
2. **Electric vehicles**: NCE01H29T-VB is widely used in battery management systems, drive control and chargers in electric vehicles, and can efficiently manage battery current to ensure vehicle stability and endurance.
3. **Industrial automation**: In industrial equipment, NCE01H29T-VB can be used for motor drive and high-load control, improving the performance and reliability of automation systems, especially in heavy-load applications.
4. **LED drive**: This MOSFET performs well in LED lighting drive circuits, providing stable current to ensure efficient operation and extend the life of LEDs.
5. **High Power Power Module**: NCE01H29T-VB is suitable for the design of high power power modules, such as UPS (Uninterruptible Power Supply) and other power solutions requiring high current and high efficiency.
Through its wide application in these fields, NCE01H29T-VB MOSFET demonstrates its key role in modern high-performance electronic devices, providing efficient and reliable solutions for various applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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