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NCE01H21T-VB Product details
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Below is detailed product information about the NCE01H21T-VB MOSFET, including product introduction, parameter description, and examples of application areas and modules.
### Product Introduction
NCE01H21T-VB is a high-power single N-channel MOSFET in a TO247 package, designed for high voltage and high current applications. Its excellent Trench technology achieves extremely low on-resistance, giving the device excellent efficiency and thermal management performance under high load conditions. The NCE01H21T-VB is suitable for a variety of applications that require fast switching and high efficiency, and can meet the needs of modern power management systems, especially in areas such as industry and electric vehicles, providing reliable solutions.
### Product Introduction
NCE01H21T-VB is a high-power single N-channel MOSFET in a TO247 package, designed for high voltage and high current applications. Its excellent Trench technology achieves extremely low on-resistance, giving the device excellent efficiency and thermal management performance under high load conditions. The NCE01H21T-VB is suitable for a variety of applications that require fast switching and high efficiency, and can meet the needs of modern power management systems, especially in areas such as industry and electric vehicles, providing reliable solutions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
### Detailed parameter description
- **Model**: NCE01H21T-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 100V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 3V
- **RDS(ON) (on-resistance)**:
- 2mΩ @ VGS = 10V
- **ID (maximum drain current)**: 320A
- **Technology**: Trench
##
Domain and module applications：
Applications and module examples
1. **Power management systems**: NCE01H21T-VB is used as the main switching device in high-efficiency power management modules, enabling fast switching operations and low energy loss, and is suitable for switch mode power supplies (SMPS) and other power conversion applications.
2. **Electric vehicles**: This MOSFET is particularly suitable for battery management and electric drive systems in electric vehicles, providing excellent performance under high current conditions, supporting fast charging and high-efficiency motor drives.
3. **Industrial equipment**: In industrial automation and control systems, NCE01H21T-VB can be used as a core component of motor drives and high-power switches, supporting high-frequency and heavy-load operations, and improving the overall efficiency and reliability of the system.
4. **Data centers**: In data center and server applications, this MOSFET is used in power modules to optimize power conversion efficiency, reduce heat generation, improve the system's energy efficiency ratio, and ensure stable power supply.
5. **Consumer Electronics**: NCE01H21T-VB is also suitable for power management modules of high-performance consumer electronics products, such as high-end audio equipment and gaming devices, to improve power efficiency and extend battery life.
Through these applications, NCE01H21T-VB provides designers with efficient and reliable solutions to meet the stringent power and performance requirements of modern electronic products.
1. **Power management systems**: NCE01H21T-VB is used as the main switching device in high-efficiency power management modules, enabling fast switching operations and low energy loss, and is suitable for switch mode power supplies (SMPS) and other power conversion applications.
2. **Electric vehicles**: This MOSFET is particularly suitable for battery management and electric drive systems in electric vehicles, providing excellent performance under high current conditions, supporting fast charging and high-efficiency motor drives.
3. **Industrial equipment**: In industrial automation and control systems, NCE01H21T-VB can be used as a core component of motor drives and high-power switches, supporting high-frequency and heavy-load operations, and improving the overall efficiency and reliability of the system.
4. **Data centers**: In data center and server applications, this MOSFET is used in power modules to optimize power conversion efficiency, reduce heat generation, improve the system's energy efficiency ratio, and ensure stable power supply.
5. **Consumer Electronics**: NCE01H21T-VB is also suitable for power management modules of high-performance consumer electronics products, such as high-end audio equipment and gaming devices, to improve power efficiency and extend battery life.
Through these applications, NCE01H21T-VB provides designers with efficient and reliable solutions to meet the stringent power and performance requirements of modern electronic products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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