NCE01H14T-VB Product details
Product introduction:
NCE01H14T-VB is a high-performance single N-channel MOSFET designed in TO247 package, optimized for high voltage and ultra-high current applications. The maximum drain-to-source voltage (VDS) of this MOSFET is 100V, and it can operate stably in a variety of harsh environments. Its threshold voltage (Vth) is 3V, providing reliable switching control capabilities. The on-resistance (RDS(ON)) of NCE01H14T-VB is only 2mΩ at VGS=10V, ensuring extremely low power consumption under high current conditions (ID can reach 320A), thereby improving the overall efficiency of the system. Using Trench technology, this MOSFET excels in switching performance and thermal management, and is suitable for high-frequency and high-efficiency power electronics applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- **Model**: NCE01H14T-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Rated drain to source voltage (VDS)**: 100V
- **Gate to source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- @ VGS = 10V: 2mΩ
- **Maximum leakage current (ID)**: 320A
- **Technology**: Trench
Domain and module applications:
NCE01H14T-VB MOSFET is widely used in the following fields and modules:
1. **Power management system**: Due to its ultra-low on-resistance and high current handling capability, NCE01H14T-VB is often used in efficient power management systems, which can optimize power conversion efficiency, reduce energy loss, and is suitable for high-frequency switching power supply applications.
2. **Electric vehicles and hybrid vehicles**: In the power management modules of electric vehicles and hybrid vehicles, this MOSFET can handle high current and high voltage, support battery charging and discharging control, and improve the energy efficiency and endurance of the vehicle.
3. **Motor drive**: In motor drive systems, the fast switching characteristics and high current capability of NCE01H14T-VB make it very suitable for driving DC motors and stepper motors, improving the response speed and efficiency of the system, and is widely used in industrial automation and robotics.
4. **Inverter**: In solar inverters and other power conversion devices, this MOSFET is used to convert DC to AC, supporting the efficient operation of renewable energy systems and meeting high power requirements.
5. **Battery Management System (BMS)**: In battery management circuits, NCE01H14T-VB can accurately control the flow of current, ensure the safe charging and discharging of batteries, and extend the service life of batteries. It is suitable for various types of battery packs.
6. **LED Lighting Driver**: Due to its excellent switching performance and low power consumption characteristics, NCE01H14T-VB is very suitable for LED driver circuits to achieve efficient brightness adjustment and current control, and is widely used in lighting and display technology.
Through the above application examples, we can see the importance of NCE01H14T-VB in modern power electronic systems, which can meet various high-efficiency and high-reliability power management needs.
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