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NCE01H10D-VB Product details
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Product Introduction
NCE01H10D-VB is a single N-channel MOSFET in a TO263 package designed for high-efficiency and high-current applications. This MOSFET has excellent electrical characteristics, including a high rated drain-source voltage (VDS) and low on-resistance (RDS(ON)), making it an excellent performer in power management, switching power supplies, and high-load drive applications. The NCE01H10D-VB is capable of withstanding voltages up to 100V and has an on-resistance of only 10mΩ at a VGS of 10V, making it ideal for systems that require high efficiency and low power consumption.
NCE01H10D-VB is a single N-channel MOSFET in a TO263 package designed for high-efficiency and high-current applications. This MOSFET has excellent electrical characteristics, including a high rated drain-source voltage (VDS) and low on-resistance (RDS(ON)), making it an excellent performer in power management, switching power supplies, and high-load drive applications. The NCE01H10D-VB is capable of withstanding voltages up to 100V and has an on-resistance of only 10mΩ at a VGS of 10V, making it ideal for systems that require high efficiency and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: NCE01H10D-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Drain current (ID)**: 100A
- **Technology**: Trench
- **Model**: NCE01H10D-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Applications and modules
NCE01H10D-VB MOSFET is suitable for multiple fields and modules, including:
1. **Power conversion**: This MOSFET is widely used in high-efficiency DC-DC converters and switching power supplies, and can provide high-efficiency conversion under high-power loads to reduce energy consumption.
2. **Electric vehicles**: In the battery management system, drive control and charger of electric vehicles, NCE01H10D-VB can be used to optimize power distribution and support high-current operation.
3. **Industrial equipment**: NCE01H10D-VB is often used in industrial automation to drive motors and other high-load equipment, improving the overall efficiency and stability of the system.
4. **LED lighting driver**: This MOSFET can provide stable current in the LED drive circuit, ensuring the efficiency and long life of the LED lighting system.
5. **Consumer Electronics**: In various consumer electronics products, such as portable devices and battery chargers, the NCE01H10D-VB enables effective power management to meet the needs for high performance and low power consumption.
Through these applications, the NCE01H10D-VB MOSFET demonstrates its importance in high current and high voltage environments, providing efficient and reliable solutions for modern electronic devices.
NCE01H10D-VB MOSFET is suitable for multiple fields and modules, including:
1. **Power conversion**: This MOSFET is widely used in high-efficiency DC-DC converters and switching power supplies, and can provide high-efficiency conversion under high-power loads to reduce energy consumption.
2. **Electric vehicles**: In the battery management system, drive control and charger of electric vehicles, NCE01H10D-VB can be used to optimize power distribution and support high-current operation.
3. **Industrial equipment**: NCE01H10D-VB is often used in industrial automation to drive motors and other high-load equipment, improving the overall efficiency and stability of the system.
4. **LED lighting driver**: This MOSFET can provide stable current in the LED drive circuit, ensuring the efficiency and long life of the LED lighting system.
5. **Consumer Electronics**: In various consumer electronics products, such as portable devices and battery chargers, the NCE01H10D-VB enables effective power management to meet the needs for high performance and low power consumption.
Through these applications, the NCE01H10D-VB MOSFET demonstrates its importance in high current and high voltage environments, providing efficient and reliable solutions for modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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