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NCE0110K-VB Product details
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Product Introduction
NCE0110K-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high-efficiency applications. With a rated drain-to-source voltage (VDS) of 100V, this MOSFET can withstand higher voltage levels and is suitable for various power management applications. Its threshold voltage (Vth) is 1.8V, which enables reliable switching control even at low voltages. NCE0110K-VB uses Trench technology with low on-resistance (RDS(ON) is 114mΩ@VGS=10V), which can provide excellent performance at higher currents (ID up to 15A), ensuring high efficiency and stability under various operating conditions.
NCE0110K-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high-efficiency applications. With a rated drain-to-source voltage (VDS) of 100V, this MOSFET can withstand higher voltage levels and is suitable for various power management applications. Its threshold voltage (Vth) is 1.8V, which enables reliable switching control even at low voltages. NCE0110K-VB uses Trench technology with low on-resistance (RDS(ON) is 114mΩ@VGS=10V), which can provide excellent performance at higher currents (ID up to 15A), ensuring high efficiency and stability under various operating conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: NCE0110K-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Rated drain to source voltage (VDS)**: 100V
- **Gate to source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 114mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 15A
- **Technology**: Trench
- **Model**: NCE0110K-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Rated drain to source voltage (VDS)**: 100V
- **Gate to source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 114mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 15A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
NCE0110K-VB MOSFET is suitable for multiple application areas, including:
1. **Switching power supply**: Due to its low on-resistance and high current carrying capacity, NCE0110K-VB can be used as the main switching element in the switching power supply, which can improve the power conversion efficiency and reduce power consumption.
2. **Motor drive**: In DC motor and stepper motor drive applications, NCE0110K-VB can provide fast switching response and efficient current control, improving motor operation efficiency and system reliability.
3. **Battery management system (BMS)**: In battery charging and discharging management, this MOSFET can effectively control the current flow, ensure that the battery operates within a safe range, and extend the battery life.
4. **LED drive circuit**: Due to its good switching characteristics and low power consumption, NCE0110K-VB is very suitable for LED drive circuits, which can achieve efficient brightness adjustment and current stabilization.
5. **Inverters and frequency converters**: NCE0110K-VB is used for current control and power conversion in inverters and frequency converters, which can support the efficient operation of renewable energy systems and meet the needs of modern power electronics.
Through these application examples, it can be seen that NCE0110K-VB has important application value in power electronic systems and can provide efficient and reliable power solutions for various modern electronic devices.
NCE0110K-VB MOSFET is suitable for multiple application areas, including:
1. **Switching power supply**: Due to its low on-resistance and high current carrying capacity, NCE0110K-VB can be used as the main switching element in the switching power supply, which can improve the power conversion efficiency and reduce power consumption.
2. **Motor drive**: In DC motor and stepper motor drive applications, NCE0110K-VB can provide fast switching response and efficient current control, improving motor operation efficiency and system reliability.
3. **Battery management system (BMS)**: In battery charging and discharging management, this MOSFET can effectively control the current flow, ensure that the battery operates within a safe range, and extend the battery life.
4. **LED drive circuit**: Due to its good switching characteristics and low power consumption, NCE0110K-VB is very suitable for LED drive circuits, which can achieve efficient brightness adjustment and current stabilization.
5. **Inverters and frequency converters**: NCE0110K-VB is used for current control and power conversion in inverters and frequency converters, which can support the efficient operation of renewable energy systems and meet the needs of modern power electronics.
Through these application examples, it can be seen that NCE0110K-VB has important application value in power electronic systems and can provide efficient and reliable power solutions for various modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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