Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
60A |
|
|
3.9mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X3) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
60A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
60A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X3) |
Single-N |
|
|
|
|
|
|
|
| **Parameter** | **Value** | **Description** |
|----------------------|--------------------------|--------------------------------------------------|
| **Package** | DFN8 (3x3mm) | Compact package for high-density circuit design|
| **Configuration** | Single N-channel | Suitable for switch control, power amplification and low-side drive|
| **V\(_{DS}\)** | 30V | Maximum drain-source voltage for medium voltage applications|
| **V\(_{GS}\)** | ±20V | Gate withstand voltage to ensure device stability under different input voltage conditions|
| **Threshold voltage (V\(_{th}\))** | 1.7V | Turn-on voltage of MOSFET to ensure it can be turned on even when driven at low voltage|
| **R\(_{DS(ON)}\)** | 5mΩ @ V\(_{GS}\) = 4.5V | Lower on-resistance helps reduce power loss|
| | 3.9mΩ @ V\(_{GS}\) = 10V| Further reduces resistance at high gate voltage, improving efficiency|
| **Maximum drain current (I\(_{D}\))** | 60A | Supports high current applications such as motors and power drives|
| **Technology** | Trench type | Provides higher power density and low loss performance|
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## III. N7514-VB
Domain and module applications:
Examples
1. **Power management module**
In laptops, smart home devices and power adapters, the N7514-VB can be used in **DC-DC converters** and **synchronous rectifiers** to improve conversion efficiency and reduce heat dissipation.
2. **Motor drive and control**
The device is well suited for **brushless DC motor (BLDC)** and stepper motor drive circuits. Its low on-resistance ensures stable operation of the motor at high currents and reduces power loss.
3. **Consumer electronics**
The N7514-VB is also very common in **load switches** in small devices such as smartphones and smart wearables, providing efficient and reliable switching capabilities.
4. **In-vehicle electronics**
In automotive electronic systems such as **electric power steering systems (EPS)** or **in-vehicle entertainment systems**, this MOSFET provides excellent performance and can be integrated into small circuit spaces due to its compact package.
5. **Battery Management System (BMS)**
Due to its excellent current carrying capacity and low on-resistance, this device is often used in **lithium battery protection circuits** and **BMS modules** to ensure efficient discharge and charge management of the battery.
---
The N7514-VB has excellent conduction performance and switching speed, suitable for a wide range of power management and drive applications, and is an ideal choice for efficient and compact circuit design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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