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N7220-VB Product details

Product introduction:

1. N7220-VB Product Introduction

N7220-VB is a high-efficiency **single N-channel MOSFET**, using **DFN8 (3x3 mm)** package, designed for high-frequency and high-power applications. Its rated drain-source voltage (VDS) is **30V**, which can withstand higher voltages. The gate-source voltage (VGS) of N7220-VB can reach **±20V**, which is suitable for various power control and switching circuits. Its turn-on threshold voltage (Vth) is **1.7V**, ensuring fast response. The on-resistance (RDS(on)) of the device is **5mΩ** at VGS=4.5V and **3.9mΩ** at VGS=10V. This extremely low resistance characteristic can significantly reduce conduction losses and improve the efficiency of the overall system. The N7220-VB supports up to **60A** of continuous drain current, which is very suitable for the needs of power management and drive circuits, and can provide efficient power conversion in a variety of application scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-N 30V 1.7V 60A 3.9mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-N 30V 1.7V 60A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-N 30V 1.7V 60A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-N
II. Detailed parameter description of N7220-VB

| **Parameter** | **Symbol** | **Value** | **Unit** | **Description** |
|---------------------|--------------|----------------------------|------------------|-----------------------------------|
| **Drain-Source voltage** | VDS | 30 | V | Maximum withstand voltage between drain and source|
| **Gate-Source voltage** | VGS | ±20 | V | Maximum voltage between gate and source|
| **Turn-on threshold voltage** | Vth | 1.7 | V | Gate voltage required for MOSFET startup|
| **On-resistance** | RDS(on) | 5mΩ @ VGS=4.5V | mΩ | Resistance value of drain-source path|
| | RDS(on) | 3.9mΩ @ VGS=10V | mΩ | Drain-source resistance|
| **Continuous drain current** | ID | 60 | A | Maximum allowed continuous drain current|
| **Technology** | - | Trench process | - | Provides excellent conduction performance and low loss|
| **Package** | - | DFN8 (3x3 mm) | - | Compact package, suitable for high-density circuit design|

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Domain and module applications:

III. Application fields and module examples

1. **Power management module**
N7220-VB can be used as **high-efficiency switching element** in power management applications, suitable for DC-DC converters, AC-DC adapters and power modules, to improve power conversion efficiency and reduce heat.

2. **Electric drive system**
This device can be used as **switching control element** in motor drive systems, providing efficient current switching, suitable for brushless DC motor and stepper motor drive applications, ensuring efficient and stable operation of the motor.

3. **LED drive circuit**
N7220-VB has important applications in LED lighting drive circuits, can efficiently control the brightness and current of LEDs, suitable for various lighting systems, and improve energy efficiency.

4. **Industrial automation**
In the field of industrial automation, this MOSFET can be used as **load switch and power control** to meet the requirements for high current and high reliability, ensuring the safe and stable operation of equipment.

5. **Consumer Electronics**
N7220-VB is also suitable for the consumer electronics field, such as **power management modules** of smartphones, tablets and notebook computers, providing efficient power conversion and extending battery life.

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The design and performance of N7220-VB make it excel in a variety of high-performance applications and is an indispensable component in modern power management and drive circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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