Product introduction:
1. N6782-VB Product Introduction
N6782-VB is a high-performance **single N-channel MOSFET**, using **DFN8 (5x6 mm)** package, designed for low-loss and high-efficiency power conversion applications. It supports **30V** drain-source voltage (VDS) and can withstand **±20V** gate-source voltage (VGS). Its turn-on threshold voltage (Vth) is 1.7V, which can be turned on quickly at a lower control voltage. The on-resistance (RDS(on)) is only 5mΩ at VGS=4.5V and as low as 3mΩ at VGS=10V, further reducing power consumption and heat loss. The device supports continuous drain currents up to **120A**, making it ideal for applications with high current requirements. Through the trench process, the N6782-VB provides excellent conduction performance and thermal management capabilities, suitable for multiple fields such as industry, automobile and consumer electronics.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
II. Detailed parameter description of N6782-VB
| **Parameter** | **Symbol** | **Value** | **Unit** | **Description** |
|---------------------|--------------|----------------------------|------------------|-----------------------------------|
| **Drain-Source voltage** | VDS | 30 | V | Maximum withstand voltage between drain and source|
| **Gate-Source voltage** | VGS | ±20 | V | Maximum voltage between gate and source|
| **Turn-on threshold voltage** | Vth | 1.7 | V | Gate voltage required for MOSFET startup|
| **On-resistance** | RDS(on) | 5mΩ @ VGS=4.5V | mΩ | Resistance value of drain-source path|
| | RDS(on) | 3mΩ @ VGS=10V | mΩ | Drain-source resistance|
| **Continuous drain current** | ID | 120 | A | Maximum allowed continuous drain current|
| **Technology** | - | Trench process | - | Provides excellent conduction performance and low loss|
| **Package** | - | DFN8 (5x6 mm) | - | Compact package suitable for high-density circuit design|
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Domain and module applications:
III. Application fields and module examples
1. **Electric Vehicles (EV) and Battery Management Systems (BMS)**
N6782-VB can be used as a **charge and discharge control switch** in the battery management system of electric vehicles, supporting high current operation to ensure the safety and efficient charging of the battery system.
2. **Server and Data Center Power Modules**
This MOSFET performs well in **DC-DC converters** and is suitable for use in power modules of high-density server and data center equipment to provide stable and efficient power supply for critical loads.
3. **Motor Control and Drive Systems**
N6782-VB is suitable for **motor drive** applications, supporting high current and fast switching, which can reduce conduction losses and improve the operating efficiency of power tools, fans and home appliances.
4. **Industrial Automation Control**
In the field of industrial automation, this device can be used as a **load switch and power management device** to meet the requirements of high current and high reliability in industrial equipment.
5. **Consumer Electronics and Smart Home**
In **power management modules** for smartphones, tablets and smart home devices, the N6782-VB provides efficient power control to help extend battery life and improve energy efficiency.
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With its low on-resistance, high current handling capability and compact package, the N6782-VB performs well in multiple application areas and is an ideal choice for modern electronic systems and industrial applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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