Product introduction:
**N6706-VB Product Introduction**
N6706-VB is a high-performance **single N-channel MOSFET**, using **DFN8 (5x6 mm)** package, designed for high current and high-efficiency applications. The device has a **maximum drain-source voltage (VDS) of 30V** and supports **±20V gate drive (VGS)**. With a **1.7V turn-on threshold voltage (Vth), its **on-resistance (RDS(ON)) is as low as 3mΩ at VGS=10V**, and it performs well under high current conditions, with a maximum drain current of **120A**. With **Trench technology**, N6706-VB provides excellent switching characteristics and low conduction losses, suitable for a variety of power management and power conversion applications.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
**Detailed parameter description**
| **Parameter** | **Specification** | **Description** |
|-------------------|--------------------------------------|----------------------------------------|
| **Package type** | DFN8 (5x6 mm) | Small package, suitable for space-constrained designs|
| **Configuration** | Single N-channel| Simplifies circuit design and reduces component count|
| **VDS**| 30V | Maximum drain-source voltage|
| **VGS**| ±20V | Operating range of gate voltage|
| **Vth**| 1.7V | Gate threshold voltage for MOSFET turn-on|
| **RDS(ON)** | 5mΩ @ VGS=4.5V | Low on-resistance, improved system efficiency|
| **RDS(ON)** | 3mΩ @ VGS=10V | Lower losses for high efficiency applications|
| **ID** | 120A | Maximum continuous drain current|
| **Technology** | Trench | Advanced technology providing low losses and high current capability|
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Domain and module applications:
**Application fields and typical module examples**
1. **Power converters and power management systems**
N6706-VB is widely used in **high-efficiency AC-DC and DC-DC converters**. Its low RDS(ON) enables it to achieve high efficiency in power adapters, chargers and regulated power supplies, significantly reducing energy loss.
2. **Electric vehicles (EV) and hybrid electric vehicles (HEV)**
In the **Battery Management System (BMS)** of electric vehicles and hybrid electric vehicles, N6706-VB can be used for efficient current switching to ensure battery charging and discharging efficiency and battery pack balance management, optimizing the overall performance of the vehicle.
3. **Consumer electronic devices**
This MOSFET is suitable for fast charging modules in **smartphones, tablets and laptops**. Its high current capability and low power consumption characteristics improve charging speed and safety.
4. **Industrial control and drive systems**
N6706-VB is suitable for use in **industrial motor drives and power management modules**, and can maintain high efficiency under high load conditions, which helps to achieve efficient power transmission and control.
5. **Photovoltaic inverter and energy storage system**
In photovoltaic power generation and energy storage systems, this MOSFET is used as an **efficient switching element** to ensure efficient conversion and storage of solar energy and improve the overall energy efficiency of the system.
Through these examples, N6706-VB demonstrates its wide applicability in power management, high-efficiency conversion and various high-power applications, becoming an indispensable high-efficiency device in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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