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N4800L-VB Product details
Back to previous pageProduct introduction：
1. N4800L-VB Product Introduction
N4800L-VB is a high-performance **N-channel MOSFET**, using **TO252 package**, designed for low-voltage and high-current applications. Its **maximum drain-source voltage (V_DS)** is **30V**, supporting **±20V** gate-source voltage (V_GS) operation. The **gate turn-on voltage (V_th)** of N4800L-VB is **1.7V**, which achieves fast turn-on response and can effectively reduce switching losses. The on-resistance (R_DS(ON)) of this MOSFET is **7mΩ** at **V_GS = 10V**, and it has a drain current (I_D) handling capability of up to **70A**. Using **Trench technology**, the device provides excellent conductivity and thermal stability, and is very suitable for a wide range of applications in power management, load drive and electric vehicles.
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N4800L-VB is a high-performance **N-channel MOSFET**, using **TO252 package**, designed for low-voltage and high-current applications. Its **maximum drain-source voltage (V_DS)** is **30V**, supporting **±20V** gate-source voltage (V_GS) operation. The **gate turn-on voltage (V_th)** of N4800L-VB is **1.7V**, which achieves fast turn-on response and can effectively reduce switching losses. The on-resistance (R_DS(ON)) of this MOSFET is **7mΩ** at **V_GS = 10V**, and it has a drain current (I_D) handling capability of up to **70A**. Using **Trench technology**, the device provides excellent conductivity and thermal stability, and is very suitable for a wide range of applications in power management, load drive and electric vehicles.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description of N4800L-VB
| **Parameter** | **Description** | **Value** |
|-------------------------|------------------------------------------------|--------------------|
| **Package type** | TO252 package| - |
| **Polarity** | Single N-channel| - |
| **V_DS** | Drain-source voltage| 30V |
| **V_GS** | Gate-source voltage range| ±20V |
| **V_th** | Gate turn-on voltage| 1.7V |
| **R_DS(ON)** | On-resistance (V_GS = 4.5V) | 9mΩ |
| **R_DS(ON)** | On-resistance (V_GS = 10V) | 7mΩ |
| **I_D** | Maximum drain current| 70A |
| **Power Dissipation (P_D)** | Maximum power dissipation capability (at 25°C) | 50W |
| **Operating temperature range** | Allowable junction temperature range| -55°C ~ 150°C |
| **Technology** | Trench technology| - |
| **Package pins** | 4 pins (for surface mounting) | - |
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| **Parameter** | **Description** | **Value** |
|-------------------------|------------------------------------------------|--------------------|
| **Package type** | TO252 package| - |
| **Polarity** | Single N-channel| - |
| **V_DS** | Drain-source voltage| 30V |
| **V_GS** | Gate-source voltage range| ±20V |
| **V_th** | Gate turn-on voltage| 1.7V |
| **R_DS(ON)** | On-resistance (V_GS = 4.5V) | 9mΩ |
| **R_DS(ON)** | On-resistance (V_GS = 10V) | 7mΩ |
| **I_D** | Maximum drain current| 70A |
| **Power Dissipation (P_D)** | Maximum power dissipation capability (at 25°C) | 50W |
| **Operating temperature range** | Allowable junction temperature range| -55°C ~ 150°C |
| **Technology** | Trench technology| - |
| **Package pins** | 4 pins (for surface mounting) | - |
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Domain and module applications：
III. Application fields and module description of N4800L-VB
1. **Power management**
N4800L-VB is very suitable for **DC-DC converter** and **power management module**, especially in high-efficiency and small-size power supply design. Its low on-resistance and high current handling capability enable it to efficiently convert power and is widely used in consumer electronic devices such as laptops, tablets and smart phones.
2. **Electric vehicles**
In the **Battery Management System (BMS)** of electric vehicles, N4800L-VB can be used as an efficient switching device to control the charging and discharging process of the battery. Its excellent conduction characteristics and high-temperature working ability ensure the stability and safety of the system under extreme conditions.
3. **LED drive**
This MOSFET can be used in **LED drive circuits** to efficiently drive high-brightness LEDs. The low on-resistance of N4800L-VB can reduce power consumption and improve light efficiency, making it suitable for use in lighting products and display devices.
4. **Motor control**
In **Motor control and drive modules**, the high current capability and fast switching characteristics of the N4800L-VB make it an ideal choice for controlling brushless DC motors (BLDC), which are widely used in home appliances, industrial equipment, and robotics applications.
5. **Load switching and hot-swap applications**
The N4800L-VB is also suitable for **load switching** and **hot-swap control**. It can quickly respond to current changes and ensure the stability of the system during electrical connection and disconnection. It is widely used in servers, computers, and other equipment that requires high reliability.
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1. **Power management**
N4800L-VB is very suitable for **DC-DC converter** and **power management module**, especially in high-efficiency and small-size power supply design. Its low on-resistance and high current handling capability enable it to efficiently convert power and is widely used in consumer electronic devices such as laptops, tablets and smart phones.
2. **Electric vehicles**
In the **Battery Management System (BMS)** of electric vehicles, N4800L-VB can be used as an efficient switching device to control the charging and discharging process of the battery. Its excellent conduction characteristics and high-temperature working ability ensure the stability and safety of the system under extreme conditions.
3. **LED drive**
This MOSFET can be used in **LED drive circuits** to efficiently drive high-brightness LEDs. The low on-resistance of N4800L-VB can reduce power consumption and improve light efficiency, making it suitable for use in lighting products and display devices.
4. **Motor control**
In **Motor control and drive modules**, the high current capability and fast switching characteristics of the N4800L-VB make it an ideal choice for controlling brushless DC motors (BLDC), which are widely used in home appliances, industrial equipment, and robotics applications.
5. **Load switching and hot-swap applications**
The N4800L-VB is also suitable for **load switching** and **hot-swap control**. It can quickly respond to current changes and ensure the stability of the system during electrical connection and disconnection. It is widely used in servers, computers, and other equipment that requires high reliability.
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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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