中文
English
N4015L-VB Product details
Back to previous pageProduct introduction：
1. N4015L-VB Product Introduction
N4015L-VB is a high-efficiency **N-channel power MOSFET**, which adopts **TO252** package and is designed for high-density power applications. The maximum drain-source voltage **VDS** of this MOSFET is **40V**, and the gate-source voltage **VGS** range is ±20V, which is suitable for a variety of power management and switching applications. N4015L-VB can carry up to **55A** of continuous current, and adopts advanced **Trench technology**. The on-resistance is only **12mΩ** at **VGS = 10V**, and **14mΩ** at **VGS = 4.5V**, which makes it perform well in high-frequency operation and effectively reduces power consumption and heat loss.
---
N4015L-VB is a high-efficiency **N-channel power MOSFET**, which adopts **TO252** package and is designed for high-density power applications. The maximum drain-source voltage **VDS** of this MOSFET is **40V**, and the gate-source voltage **VGS** range is ±20V, which is suitable for a variety of power management and switching applications. N4015L-VB can carry up to **55A** of continuous current, and adopts advanced **Trench technology**. The on-resistance is only **12mΩ** at **VGS = 10V**, and **14mΩ** at **VGS = 4.5V**, which makes it perform well in high-frequency operation and effectively reduces power consumption and heat loss.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description of N4015L-VB
| **Parameter** | **Symbol** | **Value** | **Description** |
|------------------------|-----------|-----------------------------|-------------------------------|
| **Drain-source voltage** | VDS | 40V | Maximum withstand voltage|
| **Gate-source voltage** | VGS | ±20V | Maximum gate-to-source voltage range|
| **Turn-on threshold voltage** | Vth | 2.5V | Minimum voltage required for MOSFET to start conducting|
| **On-resistance** | RDS(ON) | 12mΩ @ VGS = 10V | On-resistance in the on state|
| | RDS(ON) | 14mΩ @ VGS = 4.5V | On-resistance in the on state|
| **Maximum drain current** | ID | 55A | Maximum current during continuous conduction|
| **Peak pulse current** | IDM | 120A | Maximum current carried during short-duration pulses|
| **Power dissipation** | Ptot | 45W | Maximum power dissipation|
| **Operating junction temperature range** | Tj | -55°C ~ 150°C | Safe operating temperature range|
| **Package type** | - | TO252 | Compact package suitable for high-density layout|
| **Technology type** | - | Trench | Structure that provides low conduction losses|
---
| **Parameter** | **Symbol** | **Value** | **Description** |
|------------------------|-----------|-----------------------------|-------------------------------|
| **Drain-source voltage** | VDS | 40V | Maximum withstand voltage|
| **Gate-source voltage** | VGS | ±20V | Maximum gate-to-source voltage range|
| **Turn-on threshold voltage** | Vth | 2.5V | Minimum voltage required for MOSFET to start conducting|
| **On-resistance** | RDS(ON) | 12mΩ @ VGS = 10V | On-resistance in the on state|
| | RDS(ON) | 14mΩ @ VGS = 4.5V | On-resistance in the on state|
| **Maximum drain current** | ID | 55A | Maximum current during continuous conduction|
| **Peak pulse current** | IDM | 120A | Maximum current carried during short-duration pulses|
| **Power dissipation** | Ptot | 45W | Maximum power dissipation|
| **Operating junction temperature range** | Tj | -55°C ~ 150°C | Safe operating temperature range|
| **Package type** | - | TO252 | Compact package suitable for high-density layout|
| **Technology type** | - | Trench | Structure that provides low conduction losses|
---
Domain and module applications：
III. Application fields and module examples
1. **Switching power supply (SMPS)**
- N4015L-VB is very suitable for **DC-DC converter** and **AC-DC power supply** design. Its low on-resistance and high current carrying capacity enable it to effectively reduce energy loss in switching power supply and improve the energy efficiency of the system, especially suitable for high-power application scenarios.
2. **Motor drive**
- In **motor drive** system, N4015L-VB can be used as an efficient switching element to quickly control current and improve drive efficiency. It is suitable for **DC motor** and **stepper motor** drive applications.
3. **Portable devices and consumer electronics**
- This MOSFET is suitable for use in consumer electronics such as **smartphones**, **tablets** and **portable game consoles**. It can efficiently control power management, improve battery efficiency and extend the use time of the device.
4. **LED drive and lighting control**
- In **LED lighting** applications, N4015L-VB can be used to control the switch and brightness of LEDs, provide stable current, make the lighting effect more outstanding, and is suitable for various lighting designs.
5. **Battery Management System (BMS)**
- In **Battery Management System**, N4015L-VB can provide the necessary current control to ensure the safe charging, discharging and balancing of batteries, and is suitable for various battery pack management applications.
Through these application examples, it can be seen that N4015L-VB, as a high-performance power MOSFET, is widely used in various electronic devices, especially in high-frequency and high-current demand occasions, and has a good market prospect.
1. **Switching power supply (SMPS)**
- N4015L-VB is very suitable for **DC-DC converter** and **AC-DC power supply** design. Its low on-resistance and high current carrying capacity enable it to effectively reduce energy loss in switching power supply and improve the energy efficiency of the system, especially suitable for high-power application scenarios.
2. **Motor drive**
- In **motor drive** system, N4015L-VB can be used as an efficient switching element to quickly control current and improve drive efficiency. It is suitable for **DC motor** and **stepper motor** drive applications.
3. **Portable devices and consumer electronics**
- This MOSFET is suitable for use in consumer electronics such as **smartphones**, **tablets** and **portable game consoles**. It can efficiently control power management, improve battery efficiency and extend the use time of the device.
4. **LED drive and lighting control**
- In **LED lighting** applications, N4015L-VB can be used to control the switch and brightness of LEDs, provide stable current, make the lighting effect more outstanding, and is suitable for various lighting designs.
5. **Battery Management System (BMS)**
- In **Battery Management System**, N4015L-VB can provide the necessary current control to ensure the safe charging, discharging and balancing of batteries, and is suitable for various battery pack management applications.
Through these application examples, it can be seen that N4015L-VB, as a high-performance power MOSFET, is widely used in various electronic devices, especially in high-frequency and high-current demand occasions, and has a good market prospect.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
