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N312AS-VB Product details
Back to previous pageProduct introduction：
1. N312AS-VB Product Introduction
N312AS-VB is a **single N-channel MOSFET**, using **TO263 package**, designed for high-performance power management and switching applications. Its **drain-source voltage (VDS)** is 30V, which is suitable for low-voltage operating environments. The gate voltage (VGS) of the device supports ±20V, which can meet the needs of a variety of circuits. The turn-on threshold voltage (Vth) is 1.7V, which can achieve fast turn-on at a lower gate voltage. With a **6mΩ** low on-resistance at **VGS=10V**, N312AS-VB can carry up to **70A** of continuous current, which makes it extremely advantageous in power transmission and switch control. The device adopts **trench (Trench) process**, which not only improves the switching speed, but also reduces power consumption. It is widely used in power management, motor drive and other high-efficiency occasions.
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N312AS-VB is a **single N-channel MOSFET**, using **TO263 package**, designed for high-performance power management and switching applications. Its **drain-source voltage (VDS)** is 30V, which is suitable for low-voltage operating environments. The gate voltage (VGS) of the device supports ±20V, which can meet the needs of a variety of circuits. The turn-on threshold voltage (Vth) is 1.7V, which can achieve fast turn-on at a lower gate voltage. With a **6mΩ** low on-resistance at **VGS=10V**, N312AS-VB can carry up to **70A** of continuous current, which makes it extremely advantageous in power transmission and switch control. The device adopts **trench (Trench) process**, which not only improves the switching speed, but also reduces power consumption. It is widely used in power management, motor drive and other high-efficiency occasions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. Detailed parameter description of N312AS-VB
| **Parameter** | **Symbol** | **Value** | **Unit** | **Description** |
|---------------------|--------------|----------------------------|------------------|-----------------------------------|
| **Drain-Source voltage** | VDS | 30 | V | Maximum withstand voltage between drain and source|
| **Gate-Source voltage** | VGS | ±20 | V | Maximum rated voltage between gate and source|
| **Turn-on threshold voltage** | Vth | 1.7 | V | Gate voltage required for MOSFET startup|
| **On-resistance** | RDS(on) | 8mΩ (VGS=4.5V) / 6mΩ (VGS=10V) | mΩ | Drain-source resistance|
| **Continuous drain current** | ID | 70 | A | Maximum continuous drain current allowed|
| **Technology** | - | Trench process | - | Provides excellent conduction performance and low loss|
| **Package** | - | TO263 | - | Provides good heat dissipation performance, suitable for high current applications|
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| **Parameter** | **Symbol** | **Value** | **Unit** | **Description** |
|---------------------|--------------|----------------------------|------------------|-----------------------------------|
| **Drain-Source voltage** | VDS | 30 | V | Maximum withstand voltage between drain and source|
| **Gate-Source voltage** | VGS | ±20 | V | Maximum rated voltage between gate and source|
| **Turn-on threshold voltage** | Vth | 1.7 | V | Gate voltage required for MOSFET startup|
| **On-resistance** | RDS(on) | 8mΩ (VGS=4.5V) / 6mΩ (VGS=10V) | mΩ | Drain-source resistance|
| **Continuous drain current** | ID | 70 | A | Maximum continuous drain current allowed|
| **Technology** | - | Trench process | - | Provides excellent conduction performance and low loss|
| **Package** | - | TO263 | - | Provides good heat dissipation performance, suitable for high current applications|
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Domain and module applications：
III. Applications and Module Examples
1. **Power Management System**
The low on-resistance and high current capability of the N312AS-VB make it an ideal choice for power management modules. In switching power supplies and DC-DC converters, this MOSFET can effectively reduce energy losses and improve overall system efficiency.
2. **Motor Drive**
This device is ideal for motor control systems, capable of handling large currents to ensure efficient motor startup and stable operation. Especially in power tools and electric vehicles, it can improve the response speed and efficiency of motor control.
3. **Industrial Automation**
In industrial automation equipment, the N312AS-VB can be used in various switching power supplies, relay drivers, and power conversion modules to help improve the energy efficiency of equipment and reduce operating costs.
4. **LED Drive Circuit**
Due to its high efficiency and high current handling capability, the N312AS-VB can be used in the drive circuit of LED lighting, providing stable current output to ensure the optimal working state of the LED module.
5. **Portable Electronic Devices**
In portable devices such as smartphones and tablets, this MOSFET can be used for power management and switching applications to optimize battery efficiency and extend device life.
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As a high-performance MOSFET, N312AS-VB is widely used in a variety of electronic devices and industrial modules with its excellent current carrying capacity and low on-resistance, helping designers to improve efficiency while reducing overall system power consumption.
1. **Power Management System**
The low on-resistance and high current capability of the N312AS-VB make it an ideal choice for power management modules. In switching power supplies and DC-DC converters, this MOSFET can effectively reduce energy losses and improve overall system efficiency.
2. **Motor Drive**
This device is ideal for motor control systems, capable of handling large currents to ensure efficient motor startup and stable operation. Especially in power tools and electric vehicles, it can improve the response speed and efficiency of motor control.
3. **Industrial Automation**
In industrial automation equipment, the N312AS-VB can be used in various switching power supplies, relay drivers, and power conversion modules to help improve the energy efficiency of equipment and reduce operating costs.
4. **LED Drive Circuit**
Due to its high efficiency and high current handling capability, the N312AS-VB can be used in the drive circuit of LED lighting, providing stable current output to ensure the optimal working state of the LED module.
5. **Portable Electronic Devices**
In portable devices such as smartphones and tablets, this MOSFET can be used for power management and switching applications to optimize battery efficiency and extend device life.
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As a high-performance MOSFET, N312AS-VB is widely used in a variety of electronic devices and industrial modules with its excellent current carrying capacity and low on-resistance, helping designers to improve efficiency while reducing overall system power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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