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N312AD-VB Product details
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1. N312AD-VB Product Introduction
N312AD-VB is a high-performance **single N-channel MOSFET**, using **TO-252 package**, specially designed for low voltage and high current applications. The device has a **maximum drain-source voltage (V_DS)** of **30V**, operates in a **±20V** gate-source voltage (V_GS) range, and has good electrical characteristics. Its gate turn-on voltage (V_th) is **1.7V**, providing fast turn-on characteristics. The on-resistance (R_DS(ON)) of N312AD-VB is **6mΩ** at **V_GS = 4.5V**, and is only **5mΩ** at **V_GS = 10V**, and can withstand a drain current (I_D) of up to **80A**. Using **Trench technology**, the N312AD-VB is suitable for high-performance, low-power applications and can meet stringent energy efficiency and thermal requirements.
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N312AD-VB is a high-performance **single N-channel MOSFET**, using **TO-252 package**, specially designed for low voltage and high current applications. The device has a **maximum drain-source voltage (V_DS)** of **30V**, operates in a **±20V** gate-source voltage (V_GS) range, and has good electrical characteristics. Its gate turn-on voltage (V_th) is **1.7V**, providing fast turn-on characteristics. The on-resistance (R_DS(ON)) of N312AD-VB is **6mΩ** at **V_GS = 4.5V**, and is only **5mΩ** at **V_GS = 10V**, and can withstand a drain current (I_D) of up to **80A**. Using **Trench technology**, the N312AD-VB is suitable for high-performance, low-power applications and can meet stringent energy efficiency and thermal requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description of N312AD-VB
| **Parameter** | **Description** | **Value** |
|-------------------------|------------------------------------------------|--------------------|
| **Package type** | TO-252 package| - |
| **Polarity** | Single N-channel| - |
| **V_DS** | Drain-source voltage| 30V |
| **V_GS** | Gate-source voltage range| ±20V |
| **V_th** | Gate turn-on voltage| 1.7V |
| **R_DS(ON)** | On-resistance (V_GS = 4.5V) | 6mΩ |
| **R_DS(ON)** | On-resistance (V_GS = 10V) | 5mΩ |
| **I_D** | Maximum drain current| 80A |
| **Power Dissipation (P_D)** | Maximum power dissipation capability (at 25°C) | 150W |
| **Operating temperature range** | Allowable junction temperature range| -55°C ~ 150°C |
| **Technology** | Trench technology| - |
| **Package pins** | 3 pins (for surface mounting) | - |
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| **Parameter** | **Description** | **Value** |
|-------------------------|------------------------------------------------|--------------------|
| **Package type** | TO-252 package| - |
| **Polarity** | Single N-channel| - |
| **V_DS** | Drain-source voltage| 30V |
| **V_GS** | Gate-source voltage range| ±20V |
| **V_th** | Gate turn-on voltage| 1.7V |
| **R_DS(ON)** | On-resistance (V_GS = 4.5V) | 6mΩ |
| **R_DS(ON)** | On-resistance (V_GS = 10V) | 5mΩ |
| **I_D** | Maximum drain current| 80A |
| **Power Dissipation (P_D)** | Maximum power dissipation capability (at 25°C) | 150W |
| **Operating temperature range** | Allowable junction temperature range| -55°C ~ 150°C |
| **Technology** | Trench technology| - |
| **Package pins** | 3 pins (for surface mounting) | - |
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Domain and module applications：
III. Application fields and module description of N312AD-VB
1. **Power management system**
N312AD-VB is suitable for **DC-DC converter** and **power management module**, providing high-efficiency current control and voltage regulation. Its low on-resistance makes it more energy efficient under high current load, and is widely used in computer power supply, communication power supply and consumer electronics.
2. **Battery management system (BMS)**
In the **BMS** of electric vehicles and energy storage systems, N312AD-VB is used as the main switching device to achieve precise control of the battery charging and discharging process, ensuring the safety and efficient operation of the battery.
3. **Motor control and drive module**
This MOSFET can be used for **motor drive applications**, such as control of industrial motors and automation equipment. The high current capability and low conduction loss of N312AD-VB enable it to perform excellently during motor startup and operation.
4. **LED drive circuit**
N312AD-VB is also suitable for **LED drive circuit**, which can efficiently drive LED light sources under high current conditions, meet different lighting needs, and optimize light efficiency.
5. **Load switch and hot-swap control**
This MOSFET performs well in **load switch** and **hot-swap applications**, can quickly respond to current changes, ensure system stability and security, and is particularly suitable for computers and network equipment.
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1. **Power management system**
N312AD-VB is suitable for **DC-DC converter** and **power management module**, providing high-efficiency current control and voltage regulation. Its low on-resistance makes it more energy efficient under high current load, and is widely used in computer power supply, communication power supply and consumer electronics.
2. **Battery management system (BMS)**
In the **BMS** of electric vehicles and energy storage systems, N312AD-VB is used as the main switching device to achieve precise control of the battery charging and discharging process, ensuring the safety and efficient operation of the battery.
3. **Motor control and drive module**
This MOSFET can be used for **motor drive applications**, such as control of industrial motors and automation equipment. The high current capability and low conduction loss of N312AD-VB enable it to perform excellently during motor startup and operation.
4. **LED drive circuit**
N312AD-VB is also suitable for **LED drive circuit**, which can efficiently drive LED light sources under high current conditions, meet different lighting needs, and optimize light efficiency.
5. **Load switch and hot-swap control**
This MOSFET performs well in **load switch** and **hot-swap applications**, can quickly respond to current changes, ensure system stability and security, and is particularly suitable for computers and network equipment.
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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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