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N308AD-VB Product details
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1. N308AD-VB Product Introduction
N308AD-VB is a high-performance **N-channel power MOSFET**, which adopts **TO-252 package** and is designed for high current applications. The maximum drain-source voltage **VDS** of this MOSFET is **30V**, and the maximum gate-source voltage (VGS) is ±20V. It can carry a continuous current of up to **80A** and is suitable for circuits that require high conduction capability and low conduction loss. N308AD-VB adopts **Trench technology**, and the on-resistance is only **5mΩ** at **VGS = 10V** and **6mΩ** at **VGS = 4.5V**, which makes this MOSFET perform well in high-frequency switching applications, which can effectively reduce power consumption and heat generation, and improve the efficiency of the overall system.
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N308AD-VB is a high-performance **N-channel power MOSFET**, which adopts **TO-252 package** and is designed for high current applications. The maximum drain-source voltage **VDS** of this MOSFET is **30V**, and the maximum gate-source voltage (VGS) is ±20V. It can carry a continuous current of up to **80A** and is suitable for circuits that require high conduction capability and low conduction loss. N308AD-VB adopts **Trench technology**, and the on-resistance is only **5mΩ** at **VGS = 10V** and **6mΩ** at **VGS = 4.5V**, which makes this MOSFET perform well in high-frequency switching applications, which can effectively reduce power consumption and heat generation, and improve the efficiency of the overall system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description of N308AD-VB
| **Parameter** | **Symbol** | **Value** | **Description** |
|------------------------|-----------|-----------------------------|-------------------------------|
| **Drain-source voltage** | VDS | 30V | Maximum withstand voltage|
| **Gate-source voltage** | VGS | ±20V | Maximum gate-to-source voltage range|
| **Turning threshold voltage** | Vth | 1.7V | Minimum voltage required for MOSFET to start conducting|
| **On-resistance** | RDS(ON) | 5mΩ @ VGS = 10V | On-resistance in the on state|
| | RDS(ON) | 6mΩ @ VGS = 4.5V | On-resistance in the on state|
| **Maximum drain current** | ID | 80A | Maximum current when continuous conduction|
| **Peak pulse current** | IDM | 160A | Maximum current carried in a short pulse|
| **Power dissipation** | Ptot | 100W | Maximum power dissipation|
| **Operating junction temperature range** | Tj | -55°C ~ 150°C | Safe operating temperature range|
| **Package type** | - | TO-252 | Provides a compact and efficient heat dissipation package|
| **Technology type** | - | Trench | Provides a structure with low conduction losses|
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| **Parameter** | **Symbol** | **Value** | **Description** |
|------------------------|-----------|-----------------------------|-------------------------------|
| **Drain-source voltage** | VDS | 30V | Maximum withstand voltage|
| **Gate-source voltage** | VGS | ±20V | Maximum gate-to-source voltage range|
| **Turning threshold voltage** | Vth | 1.7V | Minimum voltage required for MOSFET to start conducting|
| **On-resistance** | RDS(ON) | 5mΩ @ VGS = 10V | On-resistance in the on state|
| | RDS(ON) | 6mΩ @ VGS = 4.5V | On-resistance in the on state|
| **Maximum drain current** | ID | 80A | Maximum current when continuous conduction|
| **Peak pulse current** | IDM | 160A | Maximum current carried in a short pulse|
| **Power dissipation** | Ptot | 100W | Maximum power dissipation|
| **Operating junction temperature range** | Tj | -55°C ~ 150°C | Safe operating temperature range|
| **Package type** | - | TO-252 | Provides a compact and efficient heat dissipation package|
| **Technology type** | - | Trench | Provides a structure with low conduction losses|
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Domain and module applications：
III. Application fields and module examples
1. **Switching Power Supply (SMPS)**
- N308AD-VB is very suitable for **DC-DC converter** and **AC-DC power supply** design. Its low on-resistance and high current carrying capacity enable it to effectively reduce energy loss in switching power supplies and improve the energy efficiency of the system.
2. **Power Tools and Battery Management**
- In **power tools** and **lithium battery management systems (BMS)**, N308AD-VB can be used as an efficient switching element to provide the necessary current control to ensure the safe and stable operation of the equipment.
3. **Electric Vehicles and Electric Vehicles**
- N308AD-VB can be used in **electric vehicle** power management modules and battery charge and discharge control to meet the needs of high power output and improve the overall performance of electric vehicles.
4. **Motor drive and control**
- In **stepper motor** and **DC motor driver**, this MOSFET can switch quickly, greatly improving the system response speed and meeting the needs of high-frequency switching control.
5. **Industrial automation and control**
- In **PLC system** and other automation equipment, N308AD-VB, as an efficient switching device, can control high current loads and meet the high reliability and high efficiency requirements of industrial applications.
In summary, N308AD-VB, with its excellent electrical characteristics and low power consumption, is suitable for a variety of high current and high frequency application scenarios, and has become an indispensable switching element in modern electronic devices.
1. **Switching Power Supply (SMPS)**
- N308AD-VB is very suitable for **DC-DC converter** and **AC-DC power supply** design. Its low on-resistance and high current carrying capacity enable it to effectively reduce energy loss in switching power supplies and improve the energy efficiency of the system.
2. **Power Tools and Battery Management**
- In **power tools** and **lithium battery management systems (BMS)**, N308AD-VB can be used as an efficient switching element to provide the necessary current control to ensure the safe and stable operation of the equipment.
3. **Electric Vehicles and Electric Vehicles**
- N308AD-VB can be used in **electric vehicle** power management modules and battery charge and discharge control to meet the needs of high power output and improve the overall performance of electric vehicles.
4. **Motor drive and control**
- In **stepper motor** and **DC motor driver**, this MOSFET can switch quickly, greatly improving the system response speed and meeting the needs of high-frequency switching control.
5. **Industrial automation and control**
- In **PLC system** and other automation equipment, N308AD-VB, as an efficient switching device, can control high current loads and meet the high reliability and high efficiency requirements of industrial applications.
In summary, N308AD-VB, with its excellent electrical characteristics and low power consumption, is suitable for a variety of high current and high frequency application scenarios, and has become an indispensable switching element in modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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