N307AS-VB Product details
Product introduction:
N307AS-VB is a high-efficiency single N-channel MOSFET in TO263 package, designed for applications requiring low conduction loss and high current carrying capacity. Its maximum drain-source voltage (VDS) is 30V, suitable for a variety of power management and switching circuits. The gate-source voltage (VGS) range of the device is ±20V, ensuring its stability under different operating conditions. The threshold voltage (Vth) of N307AS-VB is 1.7V, enabling it to conduct effectively at a lower gate drive voltage. Its low on-resistance (RDS(ON)) of 2.7mΩ (@VGS=4.5V) and 2.4mΩ (@VGS=10V) provides excellent efficiency for high current applications, greatly reducing power consumption and heat generation. This trench technology MOSFET is very suitable for high-frequency switching and high-power applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
| **Parameter** | **Value** |
|----------------------|--------------------------|
| **Model** | N307AS-VB |
| **Package** | TO263 |
| **Configuration** | Single N-channel|
| **VDS** | 30V |
| **VGS** | ±20V |
| **Vth** | 1.7V |
| **RDS(ON)** | 2.7mΩ @ VGS=4.5V |
| **RDS(ON)** | 2.4mΩ @ VGS=10V |
| **ID** | 98A |
| **Technology** | Trench technology (Trench) |
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Domain and module applications:
1. **Power management solutions**
N307AS-VB is widely used in high-efficiency DC-DC converters and switch mode power supplies (SMPS). Its low on-resistance and high current capability ensure low loss and high efficiency during energy conversion, suitable for demanding power management systems.
2. **Battery Management System (BMS)**
This MOSFET is very suitable for use in lithium-ion battery management systems for charge and discharge control. Its high current capability and low conduction loss can improve the battery's charge and discharge efficiency, ensuring the safety and performance of the battery system.
3. **Motor drive circuits**
N307AS-VB performs well in power tools and small motor drive systems, providing stable current control under fast switching conditions. Its high load capacity enables it to adapt to various motor load conditions, improving system reliability and efficiency.
4. **Consumer Electronics**
In mobile phones, tablets and other portable electronic devices, the N307AS-VB can be used as a power switch, enabling efficient power management in small devices, thereby extending the use time of the device and reducing heat generation.
5. **Automotive Electronics Applications**
In the power management and control system of the car, this MOSFET can be used for high-power lighting, driving and controlling motors, providing high efficiency and low energy consumption, ensuring efficient and reliable operation of automotive electronic systems.
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With its excellent electrical performance, especially in low on-resistance and high current carrying capacity, the N307AS-VB has become an ideal choice for a variety of high-efficiency power management and drive applications, suitable for power management, battery management and automotive electronics.
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